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What is TZ425N?

This electronic component, produced by the manufacturer "Eupec Power Semiconductors", performs the same function as "Thyristor SCR".


TZ425N Datasheet PDF - Eupec Power Semiconductors

Part Number TZ425N
Description Thyristor SCR
Manufacturers Eupec Power Semiconductors 
Logo Eupec Power Semiconductors Logo 


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Total 13 Pages



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N Datenblatt / Data sheet
Netz-Thyristor-Modul
Phase Control Thyristor Module
TZ425N
TZ425N
Kenndaten
Elektrische EigenschaftenElektrische Eigenschaften / Electrical properties
Höchstzulässige Werte / Maximum rated values
Periodische Vorwärts- und Rückwärts-Spitzensperrspannung Tvj = -40°C... Tvj max
repetitive peak forward off-state and reverse voltages
Vorwärts-Stoßspitzensperrspannung
non-repetitive peak forward off-state voltage
www.DataSheetR4Uüc.ckowmärts-Stoßspitzensperrspannung
non-repetitive peak reverse voltage
Tvj = -40°C... Tvj max
Tvj = +25°C... Tvj max
Durchlaßstrom-Grenzeffektivwert
maximum RMS on-state current
Dauergrenzstrom
average on-state current
Stoßstrom-Grenzwert
surge current
Grenzlastintegral
I²t-value
Kritische Stromsteilheit
critical rate of rise of on-state current
Kritische Spannungssteilheit
critical rate of rise of off-state voltage
TC = 85°C
TC = 74°C
Tvj = 25 °C, tP = 10 ms
Tvj = Tvj max, tP = 10 ms
Tvj = 25 °C, tP = 10 ms
Tvj = Tvj max, tP = 10 ms
DIN IEC 747-6
f = 50 Hz, iGM = 1 A, diG/dt = 1 A/µs
Tvj = Tvj max, vD = 0,67 VDRM
6.Kennbuchstabe / 6th letter F
VDRM,VRRM
1200
1600
VDSM
VRSM
1200
1600
1300
1700
ITRMSM
1400 V
1800 V 1)
1400 V
1800 V
1500 V
1900 V
800 A
ITAVM
ITSM
I²t
(diT/dt)cr
425 A
510 A
14500 A
12500 A
1051000 A²s
781000 A²s
120 A/µs
(dvD/dt)cr
1000 V/µs
Charakteristische Werte / Characteristic values
Durchlaßspannung
on-state voltage
Schleusenspannung
threshold voltage
Ersatzwiderstand
slope resistance
Zündstrom
gate trigger current
Zündspannung
gate trigger voltage
Nicht zündender Steuerstrom
gate non-trigger current
Nicht zündende Steuerspannung
gate non-trigger voltage
Haltestrom
holding current
Einraststrom
latching current
Vorwärts- und Rückwärts-Sperrstrom
forward off-state and reverse current
Zündverzug
gate controlled delay time
1) 1800 auf Anfrage/ 1800V on request
prepared by: C.Drilling
approved by: J. Novotny
Tvj = Tvj max , iT = 1500 A
vT
Tvj = Tvj max
V(TO)
Tvj = Tvj max
rT
Tvj = 25°C, vD = 6 V
IGT
Tvj = 25°C, vD = 6 V
VGT
Tvj = Tvj max , vD = 6 V
Tvj = Tvj max , vD = 0,5 VDRM
Tvj = Tvj max , vD = 0,5 VDRM
IGD
VGD
Tvj = 25°C, vD = 6 V, RA = 5
IH
Tvj = 25°C, vD = 6 V, RGK 10
iGM = 1 A, diG/dt = 1 A/µs, tg = 20 µs
Tvj = Tvj max
vD = VDRM, vR = VRRM
DIN IEC 747-6
Tvj = 25 °C,iGM = 1 A, diG/dt = 1 A/µs
IL
iD, iR
tgd
date of publication: 29.08.02
revision:
2
BIP AC / MA3-BE / 25 Mar 1992, K.Spec A 3 /92
max. 1,50 V
0,9 V
0,3 m
max. 250 mA
max. 1,5 V
max.
max.
max.
10 mA
5 mA
0,2 V
max. 300 mA
max. 1500 mA
max. 80 mA
max.
4 µs
Seite/page 1/12

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TZ425N equivalent
N Datenblatt / Data sheet
Netz-Thyristor-Modul
Phase Control Thyristor Module
TZ425N
0,100
Diagramme
0,080
0,060
www.DataSheet4U.com
0,040
Trans. Wärmewiderstand bei Sinus
0 180°
Θ=
30°
60°
90°
120°
180°
0,020
0,000
0,01
0,1
1 t [s]
10
100
Transienter innerer Wärmewiderstand je Zweig / Transient thermal impedance per arm ZthJC = f(t)
Sinusförmiger Strom / Sinusoidal current
Parameter: Stromflußwinkel Θ / Current conduction angle Θ
Trans. Wärmewiderstand bei Rechteck
0,100
0,080
0 180°
Θ=
30°
60°
90°
120°
180°
DC
0,060
0,040
0,020
0,000
0,001
0,01
0,1 t [s]
1
10 100
Transienter innerer Wärmewiderstand je Zweig / Transient thermal impedance per arm ZthJC = f(t)
Rechteckförmiger Strom / Rectangular current
Parameter: Stromflußwinkel Θ / Current conduction angle Θ
BIP AC / MA3-BE / 25 Mar 1992, K.Spec A 3 /92
Seite/page 5/12


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Part Details

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Part NumberDescriptionMFRS
TZ425NThe function is Thyristor SCR. Eupec Power SemiconductorsEupec Power Semiconductors

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