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PDF W150NF55 Data sheet ( Hoja de datos )
| Número de pieza | W150NF55 | |
| Descripción | STW150NF55 | |
| Fabricantes | STMicroelectronics | |
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Hay una vista previa y un enlace de descarga de W150NF55 (archivo pdf) en la parte inferior de esta página. Total 14 Páginas | ||
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STB150NF55 STP150NF55
STW150NF55
N-CHANNEL 55V - 0.005 Ω -120A D²PAK/TO-220/TO-247
STripFET™ II POWER MOSFET
AUTOMOTIVE SPECIFIC
TYPE
VDSS
RDS(on)
ID
STB150NF55
www.DataSheet4U.cSoTmP150NF55
STP150NF55
55 V
55 V
55 V
<0.006 Ω
<0.006 Ω
<0.006 Ω
120 A(**)
120 A(**)
120 A(**)
s TYPICAL RDS(on) = 0.005 Ω
s SURFACE-MOUNTING D2PAK (TO-263)
POWER PACKAGE
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronis unique "Single Feature Size™"
strip-based process. The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalanche characteristics and
less critical alignment steps therefore a
remarkable manufacturing reproducibility.
APPLICATIONS
s HIGH CURRENT, HIGH SWITCHING SPEED
s SOLENOID AND RELAY DRIVERS
s MOTOR CONTROL, AUDIO AMPLIFIERS
s DC-DC & DC-AC CONVERTERS
s AUTOMOTIVE
3
1
D2PAK
TO-263
(Suffix “T4”)
TO-247
3
2
1
TO-220
INTERNAL SCHEMATIC DIAGRAM
Ordering Information
SALES TYPE
STB150NF55T4
STP150NF55
STW150NF55
MARKING
B150NF55
P150NF55
W150NF55
PACKAGE
D2PAK
TO-220
TO-247
PACKAGING
TAPE & REEL
TUBE
TUBE
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS
VDGR
VGS
ID(**)
ID
IDM(•)
Ptot
Drain-source Voltage (VGS = 0)
Drain-gate Voltage (RGS = 20 kΩ)
Gate- source Voltage
Drain Current (continuous) at TC = 25°C
Drain Current (continuous) at TC = 100°C
Drain Current (pulsed)
Total Dissipation at TC = 25°C
Derating Factor
dv/dt (1) Peak Diode Recovery voltage slope
EAS (2) Single Pulse Avalanche Energy
Tstg Storage Temperature
Tj Operating Junction Temperature
(•) Pulse width limited by safe operating area.
(**) Current Limited by Package
October 2002
Value
55
55
± 20
120
106
480
300
2.0
8
850
Unit
V
V
V
A
A
A
W
W/°C
V/ns
mJ
-55 to 175
°C
(1) ISD ≤120A, di/dt ≤200A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
(2) Starting Tj = 25 oC, ID = 60 A, VDD = 30V
1/14
1 page  
Normalized Gate Threshold Voltage vs Temperature
STB150NF55 STP150NF55 STW150NF55
Normalized on Resistance vs Temperature
www.DataSheet4U.com
Source-drain Diode Forward Characteristics
Normalized Breakdown Voltage vs Temperature.
.Power Derating vs Tc
.Max Id Current vs Tc.
5/14
5 Page 
DIM.
A
D
www.DataSheet4U.com
E
F
F3
F4
G
H
L
L3
L4
L5
M
MIN.
4.7
2.2
0.4
1
2
3
15.3
19.7
14.2
2
STB150NF55 STP150NF55 STW150NF55
TO-247 MECHANICAL DATA
mm
TYP.
10.9
34.6
5.5
MAX.
5.3
2.6
0.8
1.4
2.4
3.4
15.9
20.3
14.8
3
MIN.
0.185
0.087
0.016
0.039
0.079
0.118
0.602
0.776
0.559
0.079
inch
TYP.
0.429
1.362
0.217
MAX.
0.209
0.102
0.031
0.055
0.094
0.134
0.626
0.779
0.582
0.118
P025P
11/14
11 Page | ||
| Páginas | Total 14 Páginas | |
| PDF Descargar | [ Datasheet W150NF55.PDF ] | |
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