(PDF) AP9973M Datasheet - Power MOSFET ( Transistor )

Número de pieza	AP9973M
Descripción	Power MOSFET ( Transistor )
Fabricantes	Advanced Power Electronics
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No Preview Available ! Advanced Power Electronics Corp. AP9973M N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Low Gate Charge ▼ Single Drive Requirement www.DataSheet4U▼.comSurface Mount Package Description D2 D2 D1 D1 SO-8 G2 S2 G1 S1 The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, lower on-resistance and cost-effectiveness. BVDSS RDS(ON) ID 60V 80mΩ 3.9A D1 D2 G1 G2 S1 S2 Absolute Maximum Ratings Symbol Parameter VDS VGS ID@TA=25℃ ID@TA=100℃ IDM PD@TA=25℃ Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3, VGS @ 10V Continuous Drain Current3, VGS @ 10V Pulsed Drain Current1,2 Total Power Dissipation Linear Derating Factor TSTG TJ Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-a Parameter Thermal Resistance Junction-ambient3 Rating 60 ±20 3.9 2.5 20 2 0.016 -55 to 150 -55 to 150 Units V V A A A W W/℃ ℃ ℃ Max. Value 62.5 Unit ℃/W Data and specifications subject to change without notice 201029031 1 page

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PDF AP9973M Data sheet ( Hoja de datos )