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Teilenummer | BD135 |
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Beschreibung | (BD135 - BD139) Plastic-Encapsulated Transistors | |
Hersteller | TRANSYS Electronics | |
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Gesamt 1 Seiten Transys
Electronics
LIMITED
TO-126 Plastic-Encapsulated Transistors
BD135/BD137/BD139 TRANSISTOR (NPN)
FEATURES
Power dissipation
PCM: 1.25 W (Tamb=25℃)
Collector current
www.DataSheet4U.com ICM:
1.5 A
Operating and storage junction temperature range
TJ, Tstg: -55℃ to +150℃
TO-126
1. EMITTER
2. COLLECTOR
3. BASE
123
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Symbol
Test conditions
BD135
V(BR)CBO
Ic=100µA, IE=0
BD137
BD139
BD135
V(BR)CEO
Ic=30mA, IB=0
BD137
BD139
V(BR)EBO
IE=100µA, IC=0
ICBO VCB=30V, IE=0
IEBO VEB=5V, IC=0
hFE(1)
VCE=2V, IC=5mA
hFE(2)
VCE=2V, IC=150mA
BD135
BD137/BD139
hFE(3)
VCE(sat)
VBE
VCE=2V, IC=500mA
IC=500mA, IB=50mA
VCE=2V, IC=500mA
MIN
45
60
80
45
60
80
5
25
40
40
25
TYP
MAX UNIT
V
V
V
0.1 µA
10 µA
250
160
0.5 V
1V
CLASSIFICATION OF hFE(2)
Rank
Range
6
40-100
10
63-160
16
100-250
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Seiten | Gesamt 1 Seiten | |
PDF Download | [ BD135 Schematic.PDF ] |
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