|
|
Número de pieza | IPB080N06NG | |
Descripción | Power-Transistor | |
Fabricantes | Infineon Technologies | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de IPB080N06NG (archivo pdf) en la parte inferior de esta página. Total 10 Páginas | ||
No Preview Available ! www.DataSheet4U.com
OptiMOS® Power-Transistor
Features
• Low gate charge for fast switching applications
• N-channel enhancement - normal level
• 175 °C operating temperature
• Avalanche rated
• Pb-free lead plating, RoHS compliant
IPB080N06N G IPP080N06N G
Product Summary
V DS
R DS(on),max SMDversion
ID
60 V
7.7 mΩ
80 A
Type
IPB080N06N G
IPP080N06N G
Package
Marking
P-TO263-3-2
080N06N
P-TO220-3-1
080N06N
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
I D T C=25 °C1)
T C=100 °C
Pulsed drain current
I D,pulse T C=25 °C2)
Avalanche energy, single pulse
E AS I D=80 A, R GS=25 Ω
Reverse diode dv /dt
dv /dt
I D=80 A, V DS=48 V,
di /dt =200 A/µs,
T j,max=175 °C
Gate source voltage
V GS
Power dissipation
P tot T C=25 °C
Operating and storage temperature T j, T stg
IEC climatic category; DIN IEC 68-1
Value
80
76
320
448
6
±20
214
-55 ... 175
55/175/56
1) Current is limited by bondwire; with an R thJC=0.7 K/W the chip is able to carry 107 A.
2) See figure 3
Unit
A
mJ
kV/µs
V
W
°C
Rev. 1.01
page 1
2006-05-02
1 page www.DataSheet4U.com
5 Typ. output characteristics
I D=f(V DS); T j=25 °C
parameter: V GS
240
220
200
180
160
140
120
100
80
60
40
20
0
0
20 V
10 V
7V
6.5 V
6V
5.5V
5V
1234
V DS [V]
7 Typ. transfer characteristics
I D=f(V GS); |V DS|>2|I D|R DS(on)max
parameter: T j
140
IPB080N06N G IPP080N06N G
6 Typ. drain-source on resistance
R DS(on)=f(I D); T j=25 °C
parameter: V GS
30
28
26
24
22
20 5 V
18
5.5 V
16
14
6V
12
10 6.5 V
8 7V
6 10 V
4 20 V
2
0
5 0 20 40 60 80 100 120
I D [A]
8 Typ. forward transconductance
g fs=f(I D); T j=25 °C
100
120
80
100
80 60
60
40
20
175 °C
25 °C
0
01234567
V GS [V]
40
20
0
0
20 40 60
I D [A]
80
Rev. 1.01
page 5
2006-05-02
5 Page |
Páginas | Total 10 Páginas | |
PDF Descargar | [ Datasheet IPB080N06NG.PDF ] |
Número de pieza | Descripción | Fabricantes |
IPB080N06NG | Power-Transistor | Infineon Technologies |
Número de pieza | Descripción | Fabricantes |
SLA6805M | High Voltage 3 phase Motor Driver IC. |
Sanken |
SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
Analog Devices |
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |