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F7751 Schematic ( PDF Datasheet ) - International Rectifier

Teilenummer F7751
Beschreibung IRF7751
Hersteller International Rectifier
Logo International Rectifier Logo 




Gesamt 8 Seiten
F7751 Datasheet, Funktion
www.DataSheet4U.com
l Ultra Low On-Resistance
l Dual P-Channel MOSFET
l Very Small SOIC Package
l Low Profile (< 1.2mm)
l Available in Tape & Reel
VDSS
-30V
PD - 94002
IRF7751
HEXFET® Power MOSFET
RDS(on) max
35m@VGS = -10V
55m@VGS = -4.5V
ID
-4.5A
-3.8A
Description
HEXFET® power MOSFETs from International Rectifier
utilize advanced processing techniques to achieve ex-
tremely low on-resistance per silicon area. This benefit,
combined with the ruggedized device design, that Inter-
national Rectifier is well known for, provides the de-
signer with an extremely efficient and reliable device
for use in battery and load management.
The TSSOP-8 package has 45% less footprint area than
the standard SO-8. This makes the TSSOP-8 an ideal
device for applications where printed circuit board space
is at a premium. The low profile (<1.2mm) allows it to fit
easily into extremely thin environments such as portable
electronics and PCMCIA cards.
1
2
3
4
1 = D1
2 = S1
3 = S1
4 = G1
8
7
6
5
8 = D2
7 = S2
6 = S2
5 = G2
TSSOP-8
Absolute Maximum Ratings
VDS
ID @ TC = 25°C
ID @ TC = 70°C
IDM
PD @TC = 25°C
PD @TC = 70°C
VGS
TJ, TSTG
Parameter
Drain-Source Voltage
Continuous Drain Current, VGS @ -10V
Continuous Drain Current, VGS @ -10V
Pulsed Drain Current 
Power Dissipation ƒ
Power Dissipation ƒ
Linear Derating Factor
Gate-to-Source Voltage
Junction and Storage Temperature Range
Max.
-30
-4.5
-3.6
-18
1.0
0.64
0.008
±20
-55 to +150
Units
V
A
W
W/°C
V
°C
Thermal Resistance
RθJA
www.irf.com
Parameter
Maximum Junction-to-Ambientƒ
Max.
125
Units
°C/W
1
10/04/2000






F7751 Datasheet, Funktion
www.DataSheet4U.com
IRF7751
0.100
0.200
0.080
0.150
0.060
0.040
ID = -4.5A
0.100
0.050
VGS = -4.5V
VGS = -10V
0.020
3.0
4.0 5.0 6.0 7.0 8.0 9.0
-VGS, Gate -to -Source Voltage (V)
10.0
Fig 12. Typical On-Resistance Vs.
Gate Voltage
0.000
0
10 20 30
-ID , Drain Current ( A )
40
Fig 13. Typical On-Resistance Vs.
Drain Current
10 V
QGS
VG
QG
QGD
Charge
Fig 14a. Basic Gate Charge Waveform
6
Current Regulator
Same Type as D.U.T.
50K
12V .2µF
.3µF
D.U.T.
-
+VDS
VGS
-3mA
IG ID
Current Sampling Resistors
Fig 14b. Gate Charge Test Circuit
www.irf.com

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