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Número de pieza | 2SK3264-01MR | |
Descripción | MOS-FET N-Channel enhanced | |
Fabricantes | Fuji | |
Logotipo | ||
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N-CHANNEL SILICON POWER MOS-FET
FUJI POWER MOS-FET
Features
High speed switching
Low on-resistance
No secondary breakdown
Low driving power
High voltage
VGS=±30V Guarantee
Avalanche-proof
Applications
Switching regulators
UPS
DC-DC converters
General purpose power amplifier
TO-220F15
2.54
3. Source
Equivalent circuit schematic
Maximum ratings and characteristicAbsolute maximum ratings
(Tc=25°C unless otherwise specified)
Item
Drain-source voltage
Continuous drain current
Pulsed drain current
Gate-source voltage
Maximum Avalanche Energy
Max. power dissipation
Operating and storage
temperature range
Symbol
VDS
ID
ID(puls]
VGS
EAV *1
PD
Tch
Tstg
Rating
800
±7
±28
±35
378.3
60
+150
-55 to +150
Unit
V
A
A
V
mJ
W
°C
°C
*1 L=14.2mH, Vcc=80V
Drain(D)
Gate(G)
Source(S)
Electrical characteristics (Tc =25°C unless otherwise specified)
Item
Drain-source breakdown voltaget
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Forward transcondutance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time ton
Turn-off time toff
Avalanche capability
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
Symbol
V(BR)DSS
VGS(th)
IDSS
IGSS
RDS(on)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
IAV
VSD
trr
Qrr
Test Conditions
ID=1mA VGS=0V
ID=1mA VDS=VGS
VDS=800V
VGS=0V
VGS=±35V VDS=0V
ID=3.5A VGS=10V
ID=3.5A VDS=25V
VDS=25V
VGS=0V
f=1MHz
VCC=600V ID=7A
VGS=10V
RGS=10 Ω
Tch=25°C
Tch=125°C
L=14.2mH Tch=25°C
IF=2xID VGS=0V Tch=25°C
IF=ID VGS=0V
-di/dt=100A/µs Tch=25°C
Min. Typ. Max. Units
800 V
3.5 4.0
4.5 V
10 500
µA
0.2 1.0 mA
10 100
nA
1.62
2.0 Ω
2.0 4.0
S
900 1350
130 200
pF
70 110
25 40
90 140
80 120
50 80
ns
7A
1.0 1.5 V
900 ns
10 µC
Thermalcharacteristics
Item
Thermal resistance
Symbol
Rth(ch-c)
Rth(ch-a)
Test Conditions
channel to case
channel to ambient
Min. Typ.
Max. Units
2.083 °C/W
62.5 °C/W
1
1 page |
Páginas | Total 4 Páginas | |
PDF Descargar | [ Datasheet 2SK3264-01MR.PDF ] |
Número de pieza | Descripción | Fabricantes |
2SK3264-01MR | Power MOSFET ( Transistor ) | Fuji Electric |
2SK3264-01MR | MOS-FET N-Channel enhanced | Fuji |
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