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4511GM Schematic ( PDF Datasheet ) - Advanced Power Electronics

Teilenummer 4511GM
Beschreibung AP4511GM
Hersteller Advanced Power Electronics
Logo Advanced Power Electronics Logo 




Gesamt 7 Seiten
4511GM Datasheet, Funktion
www.DataSheet4U.com
Advanced Power
Electronics Corp.
AP4511GM
Pb Free Plating Product
N AND P-CHANNEL ENHANCEMENT
MODE POWER MOSFET
Simple Drive Requirement
Low On-resistance
Fast Switching Performance
D2
D2
D2
D1 D2
DD11 D1
Description
SO-8
SO-8
GG22
S2
G1 S2
S1 G1
S1
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-
effectiveness.
The SO-8 package is universally preferred for all commercial-
industrial surface mount applications and suited for low voltage
applications such as DC/DC converters.
N-CH
P-CH
BVDSS
RDS(ON)
ID
BVDSS
RDS(ON)
ID
D1
G1 G2
S1
35V
25mΩ
7A
-35V
40mΩ
-6.1A
D2
S2
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TA=25
ID@TA=70
IDM
PD@TA=25
TSTG
TJ
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current3
Continuous Drain Current3
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
Thermal Data
Symbol
Rthj-a
Parameter
Thermal Resistance Junction-ambient3
Rating
N-channel P-channel
35 -35
±20 ±20
7 -6.1
5.7 -5
30 -30
2.0
0.016
-55 to 150
-55 to 150
Max.
Value
62.5
Units
V
V
A
A
A
W
W/
Unit
/W
Data and specifications subject to change without notice
201122041






4511GM Datasheet, Funktion
www.DataSheet4U.com
AP4511GM
P-Channel
50
T A = 25 o C
40
30
-10V
-7.0V
-5.0V
-4.5V
20
V G = - 3.0V
10
0
012345
-V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
60
I D = -4 A
55 T A =25 o C
50
45
40
35
30
3 5 7 9 11
-V GS ,Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
6
5
4
T j =150 o C
3
T j =25 o C
2
1
0
0 0.2 0.4 0.6 0.8 1
-V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.2
50
T A = 150 o C
40
30
20
10
-10V
-7.0V
-5.0V
-4.5V
V G = - 3.0V
0
012345
-V DS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
1.4
I D =-6A
V G =-10V
1.2
1.0
0.8
0.6
-50 0 50 100
T j , Junction Temperature ( o C)
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
150
1.5
1.3
1.1
0.9
0.7
0.5
-50
0
50 100 150
T j , Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature

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