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PDF ML1490 Data sheet ( Hoja de datos )

Número de pieza ML1490
Descripción RF/IF/Audio Amplifier Wideband Amplifier
Fabricantes LANSDALE Semiconductor 
Logotipo LANSDALE Semiconductor Logotipo



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ML1490
RF/IF/Audio Amplifier
Wideband Amplifier With AGC
Legacy Device: Motorola MC1490
The ML1490 is an integrated circuit featuring
wide–range AGC for use in RF/IF amplifiers and audio
amplifiers.
• High Power Gain:
50 dB Typ at 10 MHz
45 dB Typ at 60 MHz
35 dB Typ at 100 MHz
• Wide Range AGC: 60 dB Min, DC to 60 MHz
• 6.0 V to 15 V Operation, Single Polarity Supply
• Operating Temperature Range TA = –40° to +85°C
Note: See Similar ML1350 For Possible Option
MAXIMUM RATINGS (TA = +25°C, unless otherwise noted.)
Rating
Symbol
Value
Power Supply Voltage
AGC Supply
Input Differential Voltage
Operating Temperature Range
Storage Temperature Range
Junction Temperature
VCC
VAGC
VID
TA
Tstg
TJ
+18
VCC
5.0
–40 to +85
–65 to +150
+150
Unit
Vdc
Vdc
Vdc
°C
°C
°C
Representative Schematic Diagram
VAGC 70
5
470
470
4
(–) Inputs
(+)
6
5.0 k
66
5.0 k
1.1 k 1.1 k 8.4 k
2 VCC
1.5 k
5.5 k 12.1 k
8 (+)
Outputs
1 (–)
1.4 k
2.8 k
45
200 200 2.8 k
5.6 k 1.9k
200
3
Substrate 7
Pins 3 and 7 should both be connected to circuit ground.
8
1
P DIP 8 = PP
PLASTIC PACKAGE
CASE 626
CROSS REFERENCE/ORDERING INFORMATION
PACKAGE
MOTOROLA
LANSDALE
P DIP 8
MC1490P
ML1490PP
Note: Lansdale lead free (Pb) product, as it
becomes available, will be identified by a part
number prefix change from ML to MLE.
PIN CONNECTIONS
Output
(–)
1
VCC 2
GND 3
Inverting 4
Input
–+
(Top View)
Output
8 (+)
7 Substrate
Ground
6 Noninverting
Input
5 AGC
Input
SCATTERING PARAMETERS
(VCC = +12 Vdc, TA = +25°C, Zo = 50 )
f = MHz
Typ
Parameter Symbol
30
60
Input
Reflection
Coefficient
|S11|
θ11
0.95
–7.3
0.93
–16
Output
Reflection
Coefficient
|S22|
θ22
0.99
–3.0
0.98
–5.5
Forward
Transmission
Coefficient
|S21|
θ21
16.8
128
14.7
64.3
Reverse
Transmission
Coefficient
S12 0.00048 0.00092
θ12
84.9
79.2
Unit
deg
deg
deg
deg
Page 1 of 8
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Issue A

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ML1490 pdf
ML1490
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Legacy Applications Information
Figure 15. S11 and S22, Input and Output
Reflection Coefficient
LANSDALE Semiconductor, Inc.
Figure 16. S11 and S22, Input and Output
Reflection Coefficient
Figure 17. S21, Forward Transmission
Coefficient (Gain)
70 MHz 80 MHz
10 100 MHz
60 MHz
50 MHz
40 MHz
120 MHz
5.0
150 MHz
200 MHz
5.0
10
30 MHz
15
20 MHz 10 MHz
Figure 18. S12, Reverse Transmission
Coefficient (Feedback)
Page 5 of 8
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Issue A

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