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T2500NFP Schematic ( PDF Datasheet ) - Motorola Semiconductors

Teilenummer T2500NFP
Beschreibung ISOLATED TRIACs THYRISTORS
Hersteller Motorola Semiconductors
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Gesamt 4 Seiten
T2500NFP Datasheet, Funktion
MOTOROLA
www.DatSaSEheMetI4CU.OcoNm DUCTOR TECHNICAL DATA
Order this document
by T2500FP/D
Silicon Bidirectional
Triode Thyristors
. . . designed primarily for full-wave ac control applications, such as solid-state relays,
motor controls, heating controls and power supplies; or wherever full-wave silicon
gate controlled solid-state devices are needed. Triac type thyristors switch from a
blocking to a conducting state for either polarity of applied anode voltage with positive
or negative gate triggering.
Blocking Voltage to 800 Volts
All Diffused and Glass Passivated Junctions for Greater Parameter Uniformity and
Stability
Small, Rugged, Isolated Construction for Low Thermal Resistance, High Heat
Dissipation and Durability
T2500FP
Series
ISOLATED TRIACs
THYRISTORS
6 AMPERES RMS
200 thru 800 VOLTS
MT2 MT1 CASE 221C-02
G STYLE 3
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted.)
Rating
Repetitive Peak Off-State Voltage(1)
(TJ = –40 to +100°C, Gate Open)
T2500BFP
T2500DFP
T2500MFP
T2500NFP
On-State RMS Current (TC = +80°C)(2)
(Full Cycle Sine Wave 50 to 60 Hz)
Symbol
VDRM
IT(RMS)
Value
200
400
600
800
6
Unit
Volts
Amps
Peak Non-repetitive Surge Current
(One Full Cycle, 60 Hz, TC = +80°C)
Circuit Fusing Considerations
(t = 8.3 ms)
ITSM 60 Amps
I2t 40 A2s
Peak Gate Power
(TC = +80°C, Pulse Width = 1 µs)
Average Gate Power
(TC = +80°C, t = 8.3 ms)
Peak Gate Trigger Current (Pulse Width = 10 µs)
pRMS Isolation Voltage (TA = 25°C, Relative Humidity 20%)
Operating Junction Temperature Range
Storage Temperature Range
THERMAL CHARACTERISTICS
PGM
PG(AV)
IGTM
VISO
TJ
Tstg
1
0.2
4
1500
–40 to +100
–40 to +150
Watt
Watt
Amps
Volts
°C
°C
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case(2)
Case to Sink
Junction to Ambient
RθJC
RθCS
RθJA
2.7
2.2(typ)
60
°C/W
1. VDRM for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
2. The case temperature reference point for all TC measurements is a point on the center lead of the package as close as possible to the plastic
body.
Motorola Thyristor Device Data
© Motorola, Inc. 1995
1





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