Datenblatt-pdf.com


C5086 Schematic ( PDF Datasheet ) - Toshiba Semiconductor

Teilenummer C5086
Beschreibung Transistor Silicon NPN Epitaxial Planar Type
Hersteller Toshiba Semiconductor
Logo Toshiba Semiconductor Logo 




Gesamt 7 Seiten
C5086 Datasheet, Funktion
TOSHIBA Transistor Silicon NPN Epitaxial Planar Type
2SC5086
2SC5086
VHF~UHF Band Low Noise Amplifier Applications
Low noise figure, high gain.
NF = 1.1dB, |S21e|2 = 11dB (f = 1 GHz)
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Base current
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
VCBO
VCEO
VEBO
IB
IC
PC
Tj
Tstg
20
12
3
40
80
100
125
55~125
V
V
V
mA
mA
mW
°C
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate,
etc).
Microwave Characteristics (Ta = 25°C)
JEDEC
JEITA
TOSHIBA
2-2H1A
Weight: 2.4 mg (typ.)
Characteristics
Transition frequency
Insertion gain
Noise figure
Symbol
Test Condition
fT
S21e2 (1)
S21e2 (2)
NF (1)
NF (2)
VCE = 10 V, IC = 20 mA
VCE = 10 V, IC = 20 mA, f = 500 MHz
VCE = 10 V, IC = 20 mA, f = 1 GHz
VCE = 10 V, IC = 5 mA, f = 500 MHz
VCE = 10 V, IC = 5 mA, f = 1 GHz
Min Typ. Max Unit
5 7 GHz
16.5
7.5 11
dB
1
dB
1.1
2
Electrical Characteristics (Ta = 25°C)
Characteristics
Collector cut-off current
Emitter cut-off current
DC current gain
Output capacitance
Reverse transfer capacitance
Symbol
Test Condition
ICBO
VCB = 10 V, IE = 0
IEBO
VEB = 1 V, IC = 0
hFE
(Note 1)
VCE = 10 V, IC = 20 mA
Cob VCB = 10 V, IE = 0, f = 1 MHz (Note 2)
Cre
Min
80
Note 1: hFE classification O: 80~160, Y: 120~240
Note 2: Cre is measured by 3 terminal method with capacitance bridge.
1
Typ. Max Unit
1 μA
1 μA
240
1.0
0.65 1.15
pF
pF
2007-11-01






C5086 Datasheet, Funktion
2SC5086
6 2007-11-01

6 Page







SeitenGesamt 7 Seiten
PDF Download[ C5086 Schematic.PDF ]

Link teilen




Besondere Datenblatt

TeilenummerBeschreibungHersteller
C5084NPN Transistor - 2SC5084Toshiba
Toshiba
C5085NPN Transistor - 2SC5085Toshiba
Toshiba
C5086Transistor Silicon NPN Epitaxial Planar TypeToshiba Semiconductor
Toshiba Semiconductor
C5087NPN Transistor - 2SC5087Toshiba
Toshiba
C5088NPN EPITAXIAL PLANAR TYPE (VHF-UHF BAND LOW NOESE AMPLIFIER APPLICATIONS)ETC
ETC

TeilenummerBeschreibungHersteller
CD40175BC

Hex D-Type Flip-Flop / Quad D-Type Flip-Flop.

Fairchild Semiconductor
Fairchild Semiconductor
KTD1146

EPITAXIAL PLANAR NPN TRANSISTOR.

KEC
KEC


www.Datenblatt-PDF.com       |      2020       |      Kontakt     |      Suche