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PDF TSC5302D Data sheet ( Hoja de datos )
| Número de pieza | TSC5302D | |
| Descripción | High Voltage NPN Transistor | |
| Fabricantes | Taiwan Semiconductor | |
| Logotipo |  |
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Preliminary
TSC5302D
High Voltage NPN Transistor with Diode
Pin assignment:
1. Base
2. Collector
3. Emitter
BVCEO = 400V
BVCBO = 800V
Ic = 2A
VCE (SAT), = 1.0V @ Ic / Ib = 1A / 0.2A
Features
Ordering Information
Built-in free-wheeling diode makes efficient anti
saturation operation.
Part No.
TSC5302DCH
Packing
Tube
No need to interest an hfe value because of low variable TSC5302DCP
T&R
storage-time spread even though comer spirit product.
Low base drive requirement.
Block Diagram
Suitable for half bridge light ballast applications.
Package
TO-251
TO-252
Structure
Silicon triple diffused type.
NPN silicon transistor with Diode
Absolute Maximum Rating (Ta = 25 oC unless otherwise noted)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
DC
Pulse
Base Current
DC
Pulse
Collector Power Dissipation (Tc=25 oC)
TO-251
TO-252
Operating Junction Temperature
Operating Junction and Storage Temperature Range
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient
Note: 1. Single pulse, Pw = 300uS, Duty <= 2%
Symbol
VCBO
VCEO
VEBO
IC
IB
PD
TJ
TSTG
RΘjc
RΘja
Limit
800V
400V
10
2
4
1
2
75
1.5
+150
- 65 to +150
6.25
100
Unit
V
V
V
A
A
W
oC
oC
oC/W
oC/W
TS5302D Preliminary
1-1
2004/09 rev. A
1 page  
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Preliminary
TS5302D Preliminary
5-5
2004/09 rev. A
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet TSC5302D.PDF ] | |
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