T3055EL Datasheet PDF - Motorola Semiconductors
| Part Number | T3055EL | |
| Description | MMFT3055EL | |
| Manufacturers | Motorola Semiconductors | |
| Logo |  |
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MOTOROLA
www.DatSaSEheMetI4CU.OcoNm DUCTOR TECHNICAL DATA
Order this document
by MMFT3055EL/D
Medium Power Field Effect Transistor
N–Channel Enhancement Mode
Silicon Gate TMOS E–FETt
SOT–223 for Surface Mount
This advanced E–FET is a TMOS power MOSFET designed to
withstand high energy in the avalanche and commutation modes.
This device is also designed with a low threshold voltage so it is
fully enhanced with 5 Volts. This new energy efficient device also
offers a drain–to–source diode with a fast recovery time. Designed
for low voltage, high speed switching applications in power
supplies, converters and PWM motor controls, these devices are
particularly well suited for bridge circuits where diode speed and
commutating safe operating areas are critical and offer additional
safety margin against unexpected voltage transients. The device is
housed in the SOT–223 package which is designed for medium
power surface mount applications.
• Silicon Gate for Fast Switching Speeds
• Low Drive Requirement to Interface Power Loads to Logic
Level ICs, VGS(th) = 2 Volts Max
• Low RDS(on) — 0.18 Ω max
• The SOT–223 Package can be Soldered Using Wave or Re-
flow. The Formed Leads Absorb Thermal Stress During Sol-
dering, Eliminating the Possibility of Damage to the Die
• Available in 12 mm Tape and Reel
Use MMFT3055ELT1 to order the 7 inch/1000 unit reel.
Use MMFT3055ELT3 to order the 13 inch/4000 unit reel.
1
G
®
2,4
D
S
3
MMFT3055EL
Motorola Preferred Device
MEDIUM POWER
LOGIC LEVEL TMOS FET
1.5 AMP
60 VOLTS
RDS(on) = 0.18 OHM
4
1
2
3
CASE 318E–04, STYLE 3
TO–261AA
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Rating
Symbol
Drain–to–Source Voltage
Gate–to–Source Voltage — Continuous
Drain Current — Continuous
Drain Current — Pulsed
Total Power Dissipation @ TA = 25°C
Derate above 25°C
VDS
VGS
ID
IDM
PD(1)
Operating and Storage Temperature Range
Single Pulse Drain–to–Source Avalanche Energy — Starting TJ = 25°C
(VDD = 25 V, VGS = 5 V, Peak IL= 1.5 A, L = 0.2 mH, RG = 25 Ω)
TJ, Tstg
EAS
DEVICE MARKING
3055L
THERMAL CHARACTERISTICS
Thermal Resistance — Junction–to–Ambient (surface mounted)
Maximum Temperature for Soldering Purposes,
Time in Solder Bath
RθJA
TL
(1) Power rating when mounted on FR–4 glass epoxy printed circuit board using recommended footprint.
Value
60
± 15
1.5
6
0.8
6.4
– 65 to 150
178
156
260
5
TMOS is a registered trademark of Motorola, Inc.
E–FET is a trademark of Motorola, Inc.
Thermal Clad is a trademark of the Bergquist Company
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 3
Unit
Vdc
Adc
Watts
mW/°C
°C
mJ
°C/W
°C
Sec
©MMoottoororolal,aInTc.M19O9S5 Power MOSFET Transistor Device Data
1
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www.DataSheet4U.com
15 V
VGS
0
90%
IS
10%
VDS
IFM dlS/dt
trr
ton IRM
tfrr
VDS(pk)
VR
0.25 IRM
Vf VdsL
MAX. CSOA
STRESS AREA
Figure 9. Commutating Waveforms
MMFT3055EL
10
8.0
6.0
4.0
2.0
0
0 20 40 60 80
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 10. Commutating Safe Operating Area (CSOA)
RGS DUT
–
VR
+
VGS
IFM
+
20 V
–
IS
VDS
Li
VR = 80% OF RATED VDSS
VdsL = Vf + Li ⋅ dlS/dt
Figure 11. Commutating Safe Operating Area
Test Circuit
VDS
t RG
L
IL
VDD
Figure 12. Unclamped Inductive Switching
Test Circuit
BVDSS
IL(t)
VDD
tP t, (TIME)
Figure 13. Unclamped Inductive Switching
Waveforms
Motorola TMOS Power MOSFET Transistor Device Data
5
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Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for T3055EL electronic component. |
| Information | Total 10 Pages | |
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