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PDF G30N60C3D Data sheet ( Hoja de datos )
| Número de pieza | G30N60C3D | |
| Descripción | HGTG30N60C3D | |
| Fabricantes | Intersil Corporation | |
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Data Sheet
HGTG30N60C3D
January 2000 File Number 4041.2
63A, 600V, UFS Series N-Channel IGBT
with Anti-Parallel Hyperfast Diodes
The HGTG30N60C3D is a MOS gated high voltage
switching device combining the best features of MOSFETs
and bipolar transistors. The device has the high input
impedance of a MOSFET and the low on-state conduction
loss of a bipolar transistor. The much lower on-state voltage
drop varies only moderately between 25oC and 150oC. The
IGBT used is the development type TA49051. The diode
used in anti-parallel with the IGBT is the development type
TA49053.
The IGBT is ideal for many high voltage switching applications
operating at moderate frequencies where low conduction
losses are essential.
Formerly Developmental Type TA49014.
Ordering Information
PART NUMBER
PACKAGE
BRAND
HGTG30N60C3D TO-247
G30N60C3D
NOTE: When ordering, use the entire part number.
Symbol
C
Features
• 63A, 600V at TC = 25oC
• Typical Fall Time. . . . . . . . . . . . . . . . 230ns at TJ = 150oC
• Short Circuit Rating
• Low Conduction Loss
• Hyperfast Anti-Parallel Diode
Packaging
JEDEC STYLE TO-247
E
C
G
G
E
INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
4,364,073
4,598,461
4,682,195
4,803,533
4,888,627
4,417,385
4,605,948
4,684,413
4,809,045
4,890,143
4,430,792
4,620,211
4,694,313
4,809,047
4,901,127
4,443,931
4,631,564
4,717,679
4,810,665
4,904,609
4,466,176
4,639,754
4,743,952
4,823,176
4,933,740
4,516,143
4,639,762
4,783,690
4,837,606
4,963,951
4,532,534
4,641,162
4,794,432
4,860,080
4,969,027
4,587,713
4,644,637
4,801,986
4,883,767
1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 2000
1 page  
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HGTG30N60C3D
Typical Performance Curves (Continued)
8.0
TJ = 150oC, RG = 3Ω, L = 100µH, VCE(PK) = 480V
7.0
6.0
5.0
VGE = 10V
4.0
3.0
2.0
1.0
0
10
VGE = 15V
20 30 40 50
ICE, COLLECTOR TO EMITTER CURRENT (A)
60
FIGURE 11. TURN-ON ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
500
TJ = 150oC, TC = 75oC
RG = 3Ω, L = 100µH
100
VGE = 15V
fMAX1 = 0.05/(tD(OFF)I + tD(ON)I)
10 fMAX2 = (PD - PC)/(EON + EOFF)
PD = ALLOWABLE DISSIPATION
PC = CONDUCTION DISSIPATION
(DUTY FACTOR = 50%)
RθJC = 0.6oC/W
VGE = 10V
1
5 10 20 30 40
ICE, COLLECTOR TO EMITTER CURRENT (A)
60
FIGURE 13. OPERATING FREQUENCY vs COLLECTOR TO
EMITTER CURRENT
6.0
TJ = 150oC, RG = 3Ω, L = 100µH, VCE(PK) = 480V
5.0
4.0
VGE = 10V or 15V
3.0
2.0
1.0
0
10 20 30 40 50 60
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 12. TURN-OFF ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
250 TJ = 150oC, VGE = 15V, L = 100µH
200
150
LIMITED BY
100 CIRCUIT
50
0
0 100 200 300 400 500 600
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 14. SWITCHING SAFE OPERATING AREA
8000
7000
6000
5000
4000
3000
2000
1000
0
0
FREQUENCY = 400kHz
CIES
COES
CRES
5 10 15 20
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
25
FIGURE 15. CAPACITANCE vs COLLECTOR TO EMITTER
VOLTAGE
IG (REF) = 3.54mA, RL = 20Ω, TC = 25oC
600 15
480
VCE = 600V
360
12
9
240
VCE = 400V
6
VCE = 200V
120
3
00
0 40 80 120 160 200
QG, GATE CHARGE (nC)
FIGURE 16. GATE CHARGE WAVEFORMS
5
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