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PDF P20NE Data sheet ( Hoja de datos )

Número de pieza P20NE
Descripción STP20NE
Fabricantes STMicroelectronics 
Logotipo STMicroelectronics Logotipo



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No Preview Available ! P20NE Hoja de datos, Descripción, Manual

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STP20NE06
® STP20NE06FP
N - CHANNEL 60V - 0.06 - 20A TO-220/TO-220FP
STripFETPOWER MOSFET
TYPE
V DSS
RDS(on)
STP20NE06
STP20NE06FP
60 V
60 V
< 0.080
< 0.080
s TYPICAL RDS(on) = 0.06
s EXCEPTIONAL dv/dt CAPABILITY
s 100% AVALANCHE TESTED
s LOW GATE CHARGE 100 oC
s APPLICATION ORIENTED
CHARACTERIZATION
ID
20 A
13 A
DESCRIPTION
This Power Mosfet is the latest development of
STMicroelectronics unique ” Single Feature
Size” strip-based process. The resulting transi-
stor shows extremely high packing density for low
on-resistance, rugged avalance characteristics
and less critical alignment steps therefore a re-
markable manufacturing reproducibility.
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s SOLENOID AND RELAY DRIVERS
s MOTOR CONTROL, AUDIO AMPLIFIERS
s DC-DC & DC-AC CONVERTERS
s AUTOMOTIVE ENVIRONMENT (INJECTION,
ABS, AIR-BAG, LAMPDRIVERS, Etc.)
3
2
1
TO-220
3
2
1
TO-220FP
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Sy mb o l
P a ramet er
V DS
V DGR
VGS
ID
ID
IDM ()
Ptot
Drain-source Volt age (VGS = 0)
Drain- gat e Voltage (RGS = 20 k)
Gate-source Voltage
Drain Current (continuous) at Tc = 25 oC
Drain Current (continuous) at Tc = 100 oC
Drain Current (pulsed)
Tot al Dissipation at Tc = 25 oC
Derating Factor
VISO Insulation Withstand Voltage (DC)
dv/dt Peak Diode Recovery voltage slope
Ts tg Storage Temperature
Tj Max. Operating Junction Temperature
() Pulse width limited by safe operating area
June 1999
Va l u e
Un it
STP20NE06 STP20NE06FP
60 V
60 V
± 20
V
20 13 A
14 9 A
80 80 A
70
0.47
30 W
0.2 W /o C
2000
V
7
-65 to 175
175
( 1) ISD 20 A, di/dt 300 A/µs, VDD V(BR)DSS, Tj TJMAX
V/ns
oC
oC
1/9

1 page




P20NE pdf
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Gate Charge vs Gate-source Voltage
Capacitance Variations
STP20NE06/FP
Normalized Gate Threshold Voltage vs
Temperature
Normalized On Resistance vs Temperature
Source-drain Diode Forward Characteristics
5/9

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