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6N60 Schematic ( PDF Datasheet ) - Unisonic Technologies

Teilenummer 6N60
Beschreibung 600V N-CHANNEL POWER MOSFET
Hersteller Unisonic Technologies
Logo Unisonic Technologies Logo 




Gesamt 7 Seiten
6N60 Datasheet, Funktion
UNISONIC TECHNOLOGIES CO., LTD
6N60
6.2A, 600V N-CHANNEL
POWER MOSFET
DESCRIPTION
The UTC 6N60 is a high voltage power MOSFET and is
designed to have better characteristics, such as fast switching
time, low gate charge, low on-state resistance and have a high
rugged avalanche characteristics. This power MOSFET is usually
used at high speed switching applications in switching power
supplies and adaptors.
FEATURES
* RDS(ON) < 1.5@VGS = 10V
* Ultra low gate charge (typical 20 nC )
* Low reverse transfer Capacitance ( CRSS = typical 10pF )
* Fast switching capability
* Avalanche energy tested
* Improved dv/dt capability, high ruggedness
SYMBOL
Power MOSFET
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
Package
6N60L-TA3-T
6N60G-TA3-T
TO-220
6N60L-TF3-T
6N60G-TF3-T
TO-220F
6N60L-TF1-T
6N60G-TF1-T
TO-220F1
6N60L-TF2-T
6N60G-TF2-T
TO-220F2
6N60L-TF3T-T
6N60G-TF3T-T
TO-220F3
6N60L-TMS-T
6N60G-TMS-T
TO-251S
6N60L-TQ2-T
6N60G-TQ2-T
TO-263
6N60L-TQ2-R
6N60G-TQ2-R
TO-263
Note: Pin Assignment: G: Gate D: Drain S: Source
Pin Assignment
12 3
GD S
GD S
GD S
GD S
GD S
GD S
GD S
GD S
Packing
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Tape Reel
www.unisonic.com.tw
Copyright © 2015 Unisonic Technologies Co., Ltd
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6N60 Datasheet, Funktion
6N60
TEST CIRCUITS AND WAVEFORMS (Cont.)
VDS 90%
Power MOSFET
Switching Test Circuit
10%
VGS
tD(ON)
tR
tD(OFF)
tF
Switching Waveforms
VGS
10V
QGS
QG
QGD
Gate Charge Test Circuit
Charge
Gate Charge Waveform
Unclamped Inductive Switching Test Circuit
BVDSS
IAS
VDD
ID(t)
tp
VDS(t)
Time
Unclamped Inductive Switching Waveforms
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R502-117. L

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