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6N1136 Schematic ( PDF Datasheet ) - Vishay Siliconix

Teilenummer 6N1136
Beschreibung (6N1135 / 6N1136) High Speed Optocoupler
Hersteller Vishay Siliconix
Logo Vishay Siliconix Logo 




Gesamt 10 Seiten
6N1136 Datasheet, Funktion
www.DataSheet4U.com
6N1135/ 6N1136
Vishay Semiconductors
High Speed Optocoupler, 1 MBd, Photodiode with Transistor
Output, 110 °C Rated
Features
• Operating Temperature from -55 °C to +110 °C
• Isolation Test Voltage: 5300 VRMS
• TTL Compatible
• High Bit Rates: 1.0 MBd
• Bandwidth 2.0 MHz
• Open-Collector Output
• External Base Wiring Possible
• Lead-free component
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
Agency Approvals
• UL 1577 - File No. E52744 System Code H or J
• DIN EN 60747-5-2 (VDE0884)
• CUL - File No. E52744, equivalent to CSA bulletin
5A
NC 1
A2
C3
NC 4
8 C (VCC)
7 B (VB)
6 C (VO)
5 E (GND)
e3 Pbi179081
Pb-free
Signals can be transmitted between two electrically
separated circuits up to frequencies of 2.0 MHz. The
potential difference between the circuits to be coupled
should not exceed the maximum permissible refer-
ence voltages
Description
The 6N1135 and 6N1136 are 110 °C rated optocou-
plers with a GaAIAs infrared emitting diode, optically
coupled with an integrated photo detector which con-
sists of a photo diode and a high-speed transistor in a
DIP-8 plastic package.
Order Information
Part
6N1135
6N1136
6N1135-X007
6N1136-X006
6N1136-X007
6N1136-X009
Remarks
CTR 7 %, DIP-8
CTR 19 %, DIP-8
CTR 7 %, SMD-8 (option 7)
CTR 19 %, DIP-8 400 mil (option 6)
CTR 19 %, SMD-8 (option 7)
CTR 19 %, SMD-8 (option 9)
For additional information on the available options refer to
Option Information.
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is
not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
Maximum Rating for extended periods of the time can adversely affect reliability.
Input
Parameter
Reverse voltages
Test condition
Forward current
Peak forward current
t = 1.0 ms, duty cycle 50 %
Maximum surge forward current t 1.0 µs, 300 pulses/s
Thermal resistance
Power dissipation
Tamb = 70 °C
Symbol
VR
IF
IFM
IFSM
Rth
Pdiss
Value
5.0
25
50
1.0
700
45
Unit
V
mA
mA
A
K/W
mW
Document Number 83909
Rev. 1.5, 26-Oct-04
www.vishay.com
1






6N1136 Datasheet, Funktion
www6.DNata1Sh1ee3t4U5.co/m6N1136
Vishay Semiconductors
7
IF = 20 mA
6
5 16 mA
4
3
VCC= 5 V,
2 VO = 0.4 V, saturated
10 mA
2 mA
17587
1
1 mA
0
–55 –35 –15 5 25 45 65 85 105 125
Tamb – Ambient Temperature ( °C )
Figure 9. Output Current vs. Temperature
1.4
1.3 50°C
1.2
110°C
1.1
25°C
1.0 0°C
0.9 –55°C
0.8
0.7 Normalized to
0.6
IB = 20 µA, Tamb = 25_C,
VO = 5 V, non saturated
0.5
0.10
1.00
10.00
17634
IB – Base Current ( mA )
100.00
Figure 12. Normalized HFE vs. Base Current
2.0
1.8 IF = 1 mA
1.6 5 mA
1.4
1.2
1.0 10 mA
0.8
0.6
0.4
Normalized to IF = 10 mA,
Tamb = 25_C, VCC= 5 V
0.2 VO = 5 V, non–saturated
0.0
–55 –35 –15 5 25 45 65 85 105 125
17632
Tamb – Ambient Temperature ( °C )
Figure 10. Normalized Current Transfer Ratio vs. Ambient
Temperature
2.0
1.8 IF = 1 mA
1.6 5 mA
1.4
1.2
1.0 10 mA
0.8 16 mA
0.6
0.4
Normalized to IF = 16 mA,
Tamb = 25_C, VCC= 5 V
0.2 VO = 5 V, non–saturated
0.0
–55 –35 –15 5 25 45 65 85 105 125
17633
Tamb – Ambient Temperature ( °C )
Figure 11. Normalized Current Transfer Ratio vs. Ambient
Temperature
2.0
1.8 110°C
1.6 50°C
1.4
1.2
1.0 25°C
0°C
0.8 –55°C
0.6
0.4
Normalized to
IB = 20 µA, Tamb = 25_C,
0.2 VO = 0.4 V, saturated
0.0
0.10
1.00
10.00
17635
IB – Base Current ( mA )
100.00
Figure 13. Normalized HFE vs. Base Current
100.00
10.00
–55°C
0°C
1.00
25°C
50°C
0.10
110°C
0.01
0.01
17636
VCC= 5 V
0.10
1.00 10.00 100.00
IF – Forward Current ( mA )
Figure 14. Photo Current vs. Forward Current
www.vishay.com
6
Document Number 83909
Rev. 1.5, 26-Oct-04

6 Page







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