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PDF AO3401 Data sheet ( Hoja de datos )

Número de pieza AO3401
Descripción P-Channel Enhancement Mode Field Effect Transistor
Fabricantes Alpha & Omega Semiconductors 
Logotipo Alpha & Omega Semiconductors Logotipo



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No Preview Available ! AO3401 Hoja de datos, Descripción, Manual

AO3401
30V P-Channel MOSFET
General Description
Product Summary
The AO3401 uses advanced trench technology to provide
excellent RDS(ON), low gate charge and operation with gate
voltages as low as 2.5V. This device is suitable for use as
a load switch or in PWM applications.
VDS
ID (at VGS=-10V)
RDS(ON) (at VGS=-10V)
RDS(ON) (at VGS =-4.5V)
RDS(ON) (at VGS=-2.5V)
-30V
-4.0A
< 50m
< 60m
< 85m
SOT23
Top View
Bottom View
D
D
D
SG
GS
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
TA=25°C
Current
TA=70°C
Pulsed Drain Current C
ID
IDM
TA=25°C
Power Dissipation B TA=70°C
PD
Junction and Storage Temperature Range
TJ, TSTG
G
S
Maximum
-30
±12
-4
-3.2
-27
1.4
0.9
-55 to 150
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Lead
t 10s
Steady-State
Steady-State
Symbol
RθJA
RθJL
Typ
70
100
63
Max
90
125
80
Units
V
V
A
W
°C
Units
°C/W
°C/W
°C/W
Rev 6: Feb. 2011
www.aosmd.com
Page 1 of 5

1 page




AO3401 pdf
AO3401
VDC
Vgs
Ig
Gate Charge Test Circuit & Waveform
Vgs
-10V
Qg
Vds
VDC
DUT
Qgs Qgd
Vds
Vgs
Rg
Vgs
Resistive Switching Test Circuit & Waveforms
RL
Vgs
ton
td(on) tr
toff
td(off)
tf
DUT
Vdd
VDC
Vds
Charge
90%
10%
Vds
Id
Vgs
Rg
Vgs
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
2
L EAR= 1/2 LIAR
Vgs
DUT
Vds
Vdd
VDC
Id
Vgs
BVDSS
I AR
Vds +
Vds -
Isd
Vgs
Ig
DUT
L
Diode Recovery Test Circuit & Waveforms
Vgs
Q rr = - Idt
+
Vdd
VDC
-
-Isd
-Vds
-I F t rr
dI/dt
-I RM
Vdd
Rev 6: Feb. 2011
www.aosmd.com
Page 5 of 5

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