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PDF STP10NK50Z Data sheet ( Hoja de datos )
| Número de pieza | STP10NK50Z | |
| Descripción | N-CHANNEL Zener-Protected SuperMESH MOSFET | |
| Fabricantes | STMicroelectronics | |
| Logotipo |  |
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STP10NK50Z
STF10NK50Z
N-CHANNEL 500V - 0.55Ω - 9A TO-220 / TO-220FP
Zener-Protected SuperMESH™MOSFET
Table 1: General Features
TYPE
VDSS
RDS(on)
ID
Pw
STP10NK50Z 500 V
STF10NK50Z 500 V
< 0.7 Ω 9 A 125 W
< 0.7 Ω 9 A(*) 30 W
■ TYPICAL RDS(on) = 0.55 Ω
■ EXTREMELY HIGH dv/dt CAPABILITY
■ 100% AVALANCHE TESTED
■ GATE CHARGE MINIMIZED
■ VERY LOW INTRINSIC CAPACITANCES
■ VERY GOOD MANUFACTURING
REPEATIBILITY
DESCRIPTION
The SuperMESH™ series is obtained through an
extreme optimization of ST’s well established
strip-based PowerMESH™ layout. In addition to
pushing on-resistance significantly down, special
care is taken to ensure a very good dv/dt capability
for the most demanding applications. Such series
complements ST full range of high voltage MOS-
FETs including revolutionary MDmesh™ products.
Figure 1: Package
TO-220
3
2
1
TO-220FP
Figure 2: Internal Schematic Diagram
APPLICATIONS
■ HIGH CURRENT, HIGH SPEED SWITCHING
■ IDEAL FOR OFF-LINE POWER SUPPLIES,
ADAPTORS AND PFC
■ LIGHTING
Table 2: Order Codes
SALES TYPE
STP10NK50Z
STF10NK50Z
MARKING
P10NK50Z
F10NK50Z
PACKAGE
TO-220
TO-220FP
PACKAGING
TUBE
TUBE
September 2005
Rev. 2
1/12
1 page  
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Figure 9: Transconductance
STP10NK50Z - STF10NK50Z
Figure 12: Static Drain-source On Resistance
Figure 10: Gate Charge vs Gate-source Voltage Figure 13: Capacitance Variations
Figure 11: Normalized Gate Threshold Voltage
vs Temperature
Figure 14: Normalized On Resistance vs Tem-
perature
5/12
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Table 10: Revision History
Date
01-Jul-2005
08-Sep-2005
Revision
1
2
STP10NK50Z - STF10NK50Z
Description of Changes
First Release.
Inserted Ecopak indication
11/12
11 Page | ||
| Páginas | Total 12 Páginas | |
| PDF Descargar | [ Datasheet STP10NK50Z.PDF ] | |
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