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PDF LP1500SOT89 Data sheet ( Hoja de datos )
| Número de pieza | LP1500SOT89 | |
| Descripción | LOW NOISE/ HIGH LINEARITY PACKAGED PHEMT | |
| Fabricantes | Filtronic Compound Semiconductors | |
| Logotipo |  |
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LP1500SOT89
LOW NOISE, HIGH LINEARITY PACKAGED PHEMT
• FEATURES
♦ 27.5 dBm Output Power at 1-dB Compression at 1.8 GHz
♦ 17 dB Power Gain at 1.8 GHz
♦ 1.0 dB Noise Figure
♦ 44 dBm Output IP3 at 1.8 GHz
♦ 50% Power-Added Efficiency
• DESCRIPTION AND APPLICATIONS
The LP1500SOT89 is a packaged Aluminum Gallium Arsenide / Indium Gallium Arsenide
(AlGaAs/InGaAs) pseudomorphic High Electron Mobility Transistor (pHEMT). It utilizes a
0.25 µm x 1500 µm Schottky barrier gate, defined by electron-beam photolithography. The recessed
“mushroom” gate structure minimizes parasitic gate-source and gate resistance. The epitaxial
structure and processing have been optimized for reliable high-power applications. The LP1500 also
features Si3N4 passivation and is available in die form or in other packages.
Typical applications include drivers or output stages in PCS/Cellular amplifiers, WLL and WLAN
systems, and other types of wireless infrastructure systems.
• ELECTRICAL SPECIFICATIONS @ TAmbient = 25°C
Parameter
Saturated Drain-Source Current
LP1500SOT89-1
LP1500SOT89-2
LP1500SOT89-3
Power at 1-dB Compression
Power Gain at 1-dB Compression
Power-Added Efficiency
Symbol
IDSS
P-1dB
G-1dB
PAE
Noise Figure
Output Third-Order Intercept Point
NF
IP3
Maximum Drain-Source Current
Transconductance
Gate-Source Leakage Current
Pinch-Off Voltage
Gate-Source Breakdown
Voltage Magnitude
Gate-Drain Breakdown
Voltage Magnitude
frequency=1.8 GHz
IMAX
GM
IGSO
VP
|VBDGS|
|VBDGD|
Test Conditions
VDS = 2 V; VGS = 0 V
VDS = 5 V; IDS = 50% IDSS
VDS = 5 V; IDS = 50% IDSS
VDS = 5 V; IDS = 50% IDSS;
PIN = 15 dBm
VDS = 5 V; IDS = 50% IDSS
VDS = 5V; IDS = 50% IDSS;
PIN = -1 dBm
VDS = 2 V; VGS = 1 V
VDS = 2 V; VGS = 0 V
VGS = -5 V
VDS = 2 V; IDS = 8 mA
IGS = 8 mA
IGD = 8 mA
Min Typ Max Units
375 420 450 mA
451 490 526 mA
527 560 600 mA
26 27.5
dBm
15 17
dB
50 %
1.0 dB
44 dBm
925 mA
300 400
mS
10 100 µA
-0.25 -1.2 -2.0 V
-10 -12
V
-10 -13
V
Phone: (408) 988-1845
Fax: (408) 970-9950
http:// www.filss.com
Revised: 1/16/02
Email: [email protected]
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet LP1500SOT89.PDF ] | |
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