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PDF LP1500P100 Data sheet ( Hoja de datos )

Número de pieza LP1500P100
Descripción PACKAGED 1W POWER PHEMT
Fabricantes Filtronic Compound Semiconductors 
Logotipo Filtronic Compound Semiconductors Logotipo



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No Preview Available ! LP1500P100 Hoja de datos, Descripción, Manual

FEATURES
31 dBm Output Power at 1-dB Compression at 15 GHz
9 dB Power Gain at 15 GHz
42 dBm Output IP3 at 15GHz
60% Power-Added Efficiency
LP1500P100
PACKAGED 1W POWER PHEMT
DESCRIPTION AND APPLICATIONS
The LP1500P100 is a packaged Aluminum Gallium Arsenide / Indium Gallium Arsenide
(AlGaAs/InGaAs) pseudomorphic High Electron Mobility Transistor (pHEMT). It utilizes a
0.25 µm x 1500 µm Schottky barrier gate, defined by electron-beam photolithography. The recessed
“mushroom” gate structure minimizes parasitic gate-source and gate resistance. The epitaxial
structure and processing have been optimized for reliable high-power applications. The LP1500 also
features Si3N4 passivation and is available in die form or in other packages.
The LP1500P100 is designed for medium-power, linear amplification. This device is suitable for
applications in commercial and military environments, and it is appropriate to be used as a medium
power transistor in SATCOM uplink transmitters, medium-haul digital radio transmitters, PCS high
efficiency amplifiers, and WLL systems.
ELECTRICAL SPECIFICATIONS @ TAmbient = 25°C
Parameter
Saturated Drain-Source Current
Power at 1-dB Compression
Power Gain at 1-dB Compression
Power-Added Efficiency
Symbol
IDSS
P-1dB
G-1dB
PAE
Output Third-Order Intercept Point IP3
Maximum Drain-Source Current
Transconductance
Gate-Source Leakage Current
Pinch-Off Voltage
Gate-Source Breakdown
Voltage Magnitude
Gate-Drain Breakdown
Voltage Magnitude
frequency=15 GHz
IMAX
GM
IGSO
VP
|VBDGS|
|VBDGD|
Test Conditions
VDS = 2 V; VGS = 0 V
VDS = 8 V; IDS = 50% IDSS
VDS = 8 V; IDS = 50% IDSS
VDS = 8 V; IDS = 50% IDSS;
PIN = 17 dBm
VDS = 8V; IDS = 50% IDSS;
PIN = 10 dBm
VDS = 2 V; VGS = 1 V
VDS = 2 V; VGS = 0 V
VGS = -5 V
VDS = 2 V; IDS = 5 mA
IGS = 8 mA
IGD = 8 mA
Min Typ Max Units
375 490 600 mA
29.5 31
dBm
89
dB
60 %
42 dBm
925 mA
300 400
mS
10 100 µA
-0.25 -1.2 -2.0
V
-12 -15
V
-12 -16
V
Phone: (408) 988-1845
Fax: (408) 970-9950
http:// www.filss.com
Revised: 1/20/01

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