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Teilenummer | D667C |
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Beschreibung | NPN Transistor - 2SD667C | |
Hersteller | ETC | |
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Gesamt 3 Seiten www.DataSheet4U.com
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92MOD Plastic-Encapsulate Transistors
2SD667,2SD667A TRANSISTOR (NPN)
FEATURES
z Low frequency power amplifier
z Complementary pair with 2SB647/A
MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
PC
TJ
Tstg
Parameter
Collector- Base Voltage
Collector-Emitter Voltage 2SD667
2SD667A
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Value
120
80
100
5
1
900
150
-55-150
Units
V
V
V
A
mW
℃
℃
TO-92MOD
1. EMITTER
2. COLLECTOR
3. BASE
123
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
CLASSIFICATION OF hFE(1)
Rank
Range
2SD667
2SD667A
Symbol Test conditions
V(BR)CBO IC=10μA,IE=0
V(BR)CEO IC=1mA,IB=0
V(BR)EBO
ICBO
IEBO
IE=10μA,IC=0
VCB=100V,IE=0
VEB=4V,IC=0
hFE(1) VCE=5V,IC=150mA
hFE(2)
VCE(sat)
VBE
fT
Cob
VCE=5V,IC=500mA
IC=500mA,IB=50mA
VCE=5V,IC=150mA
VCE=5V,IC=150mA
VCB=10V,IE=0,f=1MHz
2SD667
2SD667A
2SD667
2SD667A
MIN
120
80
100
5
60
60
30
B
60-120
60-120
C
100-200
100-200
TYP MAX UNIT
V
V
V
V
10 μA
10 μA
320
200
1V
1.5 V
140 MHz
12 pF
D
160-320
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Seiten | Gesamt 3 Seiten | |
PDF Download | [ D667C Schematic.PDF ] |
Teilenummer | Beschreibung | Hersteller |
D667 | Silicon NPN Epitaxial | Renesas |
D667A | Silicon NPN Epitaxial | Renesas |
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