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PDF APTGT100DA170T Data sheet ( Hoja de datos )

Número de pieza APTGT100DA170T
Descripción IGBT Power Module
Fabricantes Advanced Power Technology 
Logotipo Advanced Power Technology Logotipo



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APTGT100DA170T
Boost chopper
Trench + Field Stop IGBT®
Power Module
VB US SENS E
VBUS
NT C2
CR1
Q2
G2
E2
0/VBU S
OUT
NT C1
VBUS
VBUS
SENSE
G2
E2
0/VBUS
E2
G2
OUT
OUT
NTC2
NTC1
VCES = 1700V
IC = 100A @ Tc = 80°C
Application
AC and DC motor control
Switched Mode Power Supplies
Power Factor Correction
Features
Trench + Field Stop IGBT® Technology
- Low voltage drop
- Low tail current
- Switching frequency up to 20 kHz
- Soft recovery parallel diodes
- Low diode VF
- Low leakage current
- Avalanche energy rated
- RBSOA and SCSOA rated
Kelvin emitter for easy drive
Very low stray inductance
- Symmetrical design
- Lead frames for power connections
High level of integration
Internal thermistor for temperature monitoring
Benefits
Stable temperature behavior
Very rugged
Solderable terminals for easy PCB mounting
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Easy paralleling due to positive TC of VCEsat
Low profile
Absolute maximum ratings
Symbol
Parameter
VCES Collector - Emitter Breakdown Voltage
IC Continuous Collector Current
ICM
VGE
PD
RBSOA
Pulsed Collector Current
Gate – Emitter Voltage
Maximum Power Dissipation
Reverse Bias Safe Operating Area
TC = 25°C
TC = 80°C
TC = 25°C
TC = 25°C
Tj = 125°C
Max ratings
1700
150
100
200
±20
560
200A @ 1600V
Unit
V
A
V
W
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
APT website – http://www.advancedpower.com
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APTGT100DA170T pdf
APTGT100DA170T
Operating Frequency vs Collector Current
30
25
20
ZVS
15
ZCS
VCE=900V
D=50%
RG=4.7
TJ =125°C
TC= 75°C
10
5 hard
switching
0
0 20 40
60 80 100 120 140
IC (A)
200
175
150
125
100
75
50
25
0
0
Forward Characteristic of diode
TJ =25°C
TJ= 125°C
TJ=125°C
0.5 1 1.5 2 2.5
VF (V)
3
0.4
0.9
0. 35
0.3 0.7
0. 25
0.2 0.5
0.15 0.3
0.1
0.05 0.1
0 0.05
0.00001
maximum Effective Transient Thermal Impedance, Junction to Pulse Duration
Diode
0.0001
Single Pulse
0.001
0.01
0. 1
rectangular Pulse Duration (Seconds)
1
10
APT reserves the right to change, without notice, the specifications and information contained herein
APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
APT website – http://www.advancedpower.com
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