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Teilenummer | GM2501 |
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Beschreibung | P-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
Hersteller | GTM | |
Logo | ||
Gesamt 4 Seiten www.DataSheet4U.com
Pb Free Plating Product
ISSUED DATE :2005/12/16
REVISED DATE :
GM2501
P-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS
RDS(ON)
ID
-20V
200m
-2.6A
Description
The GM2501 provide the designer with the best combination of fast switching, low on-resistance and
cost-effectiveness.
The SOT-89 package is universally preferred for all commercial-industrial surface mount applications and
suited for low voltage and battery power applications.
Features
*Simple Drive Requirement
*Surface Mount Device
Package Dimensions
SOT-89
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
4.4 4.6
4.05 4.25
1.50 1.70
1.30 1.50
2.40 2.60
0.89 1.20
REF.
G
H
I
J
K
L
M
Millimeter
Min. Max.
3.00 REF.
1.50 REF.
0.40 0.52
1.40 1.60
0.35 0.41
5°TYP.
0.70 REF.
Absolute Maximum Ratings
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current3
Continuous Drain Current3
Pulsed Drain Current1,2
Total Power Dissipation
Linear Derating Factor
VDS
VGS
ID @TA=25
ID @TA=70
IDM
PD @TA=25
Operating Junction and Storage Temperature Range Tj, Tstg
Ratings
-20
±12
-2.6
-2.1
-10
1.5
0.012
-55 ~ +150
Unit
V
V
A
A
A
W
W/
Thermal Data
Parameter
Thermal Resistance Junction-ambient
Max.
Symbol
Rthj-a
Value
83.3
Unit
/W
GM2501
Page: 1/4
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Seiten | Gesamt 4 Seiten | |
PDF Download | [ GM2501 Schematic.PDF ] |
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