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PDF MRF6P21190HR6 Data sheet ( Hoja de datos )
| Número de pieza | MRF6P21190HR6 | |
| Descripción | RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET | |
| Fabricantes | Freescale Semiconductor | |
| Logotipo |  |
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Technical Data
RF Power Field Effect Transistor
N - Channel Enhancement - Mode Lateral MOSFET
Designed for W- CDMA base station applications with frequencies from 2110
to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applica-
t i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L
applications.
• 2BTyaxpni9dc5wa0lid2mt-hAC=,aPr3ro.i8eut4r =WM4H-4CzWD, PMaAtAtRs PA=evr8gf.o.5,rmFduBalnl@Fcere0: q.V0uD1eD%nc=Py2rB8oabVnaodbl,tilsiCt,yhIDoaQnnn=CeCl DF.
Power Gain — 15.5 dB
Drain Efficiency — 26.5%
IM3 @ 10 MHz Offset — - 37 dBc @ 3.84 MHz Channel Bandwidth
ACPR @ 5 MHz Offset — - 40 dBc @ 3.84 MHz Channel Bandwidth
• Capable of Handling 10:1 VSWR, @ 28 Vdc, 2140 MHz, 190 Watts CW
Output Power
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• Internally Matched for Ease of Use
• Qualified Up to a Maximum of 32 VDD Operation
• Integrated ESD Protection
• Lower Thermal Resistance Package
• Designed for Lower Memory Effects and Wide Instantaneous Bandwidth
Applications
• Low Gold Plating Thickness on Leads, 40µ″ Nominal.
• Pb - Free and RoHS Compliant
• In Tape and Reel. R6 Suffix = 150 Units per 56 mm, 13 inch Reel.
Document Number: MRF6P21190HR6
Rev. 2, 8/2005
MRF6P21190HR6
2170 MHz, 44 W AVG., 28 V
2 x W - CDMA
LATERAL N - CHANNEL
RF POWER MOSFET
CASE 375D - 05, STYLE 1
NI - 1230
Table 1. Maximum Ratings
Rating
Symbol
Value
Drain - Source Voltage
Gate - Source Voltage
Total Device Dissipation @ TC = 25°C
Derate above 25°C
VDSS
VGS
PD
- 0.5, +68
- 0.5, +12
700
4
Storage Temperature Range
Operating Junction Temperature
CW Operation
Tstg - 65 to +150
TJ 200
CW 190
Table 2. Thermal Characteristics
Characteristic
Symbol
Value (1,2)
Thermal Resistance, Junction to Case
Case Temperature 80°C, 190 W CW
Case Temperature 72°C, 44 W CW
RθJC
0.25
0.27
1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access
the MTTF calculators by product.
2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
Unit
Vdc
Vdc
W
W/°C
°C
°C
W
Unit
°C/W
NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
Freescale Semiconductor, Inc., 2005. All rights reserved.
RF Device Data
Freescale Semiconductor
MRF6P21190HR6
1
1 page  
TYPICAL CHARACTERISTICS
20
18 ηD
40
30
16 20
14 Gps VDD = 28 Vdc, Pout = 44 W (Avg.), IDQ = 1900 mA
2−Carrier W−CDMA, 10 MHz Carrier Spacing
12
IRL
10
3.84 MHz Channel Bandwidth, PAR = 8.5 dB
8 IM3 @ 0.01% Probability (CCDF)
10
−10
−20
−30
−10
−15
−20
6
ACPR
4
2080 2100
2120 2140 2160 2180 2200
−40
−50
2220
−25
−30
f, FREQUENCY (MHz)
Figure 3. 2 - Carrier W - CDMA Broadband Performance @ Pout = 44 Watts Avg.
20
18 ηD
50
40
16 Gps
30
14
12
IRL
10
8
IM3
VDD = 28 Vdc, Pout = 87 W (Avg.), IDQ = 1900 mA
2−Carrier W−CDMA, 10 MHz Carrier Spacing
3.84 MHz Channel Bandwidth, PAR = 8.5 dB
@ 0.01% Probability (CCDF)
20
0 −10
−10 −15
−20 −20
6
ACPR
4
2080 2100
2120 2140 2160
2180 2200
−30
−40
2220
−25
−30
f, FREQUENCY (MHz)
Figure 4. 2 - Carrier W - CDMA Broadband Performance @ Pout = 87 Watts Avg.
17
IDQ = 2500 mA
16.5
2200 mA
16
1900 mA
15.5
1600 mA
15
14.5 1300 mA
14
1
VDD = 28 Vdc, f1 = 2135 MHz, f2 = 2145 MHz
Two−Tone Measurements, 10 MHz Tone Spacing
10 100 400
Pout, OUTPUT POWER (WATTS) PEP
Figure 5. Two - Tone Power Gain versus
Output Power
−30
VDD = 28 Vdc, f1 = 2135 MHz, f2 = 2145 MHz
Two−Tone Measurements, 10 MHz Tone Spacing
−35 IDQ = 2500 mA
2200 mA
−40 1900 mA
1600 mA
−45
−50
−55
1
1300 mA
10
100 400
Pout, OUTPUT POWER (WATTS) PEP
Figure 6. Third Order Intermodulation Distortion
versus Output Power
RF Device Data
Freescale Semiconductor
MRF6P21190HR6
5
5 Page 
PACKAGE DIMENSIONS
2X Q
AA
bbb M T A M B M
G4
L
B
12
4X K
34
4X
D
aaa M T A M
BM
B
(FLANGE)
ccc M T A M B M
N
(LID)
H
C
E PIN 5
M
T
SEATING
PLANE
(INSULATOR)
bbb M T A M B M
ccc M T A M
R
(LID)
BM
F
S
(INSULATOR)
bbb M T A M B M
CASE 375D - 05
ISSUE E
NI - 1230
NOTES:
1. INTERPRET DIMENSIONS AND TOLERANCES
PER ASME Y14.5M−1994.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY
FROM PACKAGE BODY.
4. RECOMMENDED BOLT CENTER DIMENSION OF
1.52 (38.61) BASED ON M3 SCREW.
INCHES
DIM MIN MAX
A 1.615 1.625
B 0.395 0.405
C 0.150 0.200
D 0.455 0.465
E 0.062 0.066
F 0.004 0.007
G 1.400 BSC
H 0.082 0.090
K 0.117 0.137
L 0.540 BSC
M 1.219 1.241
N 1.218 1.242
Q 0.120 0.130
R 0.355 0.365
S 0.365 0.375
aaa 0.013 REF
bbb 0.010 REF
ccc 0.020 REF
STYLE 1:
PIN 1. DRAIN
2. DRAIN
3. GATE
4. GATE
5. SOURCE
MILLIMETERS
MIN MAX
41.02 41.28
10.03 10.29
3.81 5.08
11.56 11.81
1.57 1.68
0.10 0.18
35.56 BSC
2.08 2.29
2.97 3.48
13.72 BSC
30.96 31.52
30.94 31.55
3.05 3.30
9.01 9.27
9.27 9.53
0.33 REF
0.25 REF
0.51 REF
RF Device Data
Freescale Semiconductor
MRF6P21190HR6
11
11 Page | ||
| Páginas | Total 12 Páginas | |
| PDF Descargar | [ Datasheet MRF6P21190HR6.PDF ] | |
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