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GU60N03 Schematic ( PDF Datasheet ) - GTM

Teilenummer GU60N03
Beschreibung N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Hersteller GTM
Logo GTM Logo 




Gesamt 5 Seiten
GU60N03 Datasheet, Funktion
www.DataSheet4U.com
Pb Free Plating Product
ISSUED DATE :2005/01/25
REVISED DATE :2005/10/19B
GU60N03
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS
RDS(ON)
ID
30V
16.5m
55A
Description
The GU60N03 provide the designer with the best combination of fast switching, ruggedized device design, low
on-resistance and cost-effectiveness.
The TO-263 package is universally preferred for all commercial-industrial surface mount applications and
suited for low voltage application such as DC/DC converters and high efficiency switching circuit.
Features
*Dynamic dv/dt Rating
*Simple Drive Requirement
*Repetitive Avalanche Rated
*Fast Switching
Package Dimensions
Absolute Maximum Ratings
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current, VGS@10V
Continuous Drain Current, VGS@10V
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
ID @TC=25
ID @TC=100
IDM
PD @TC=25
Operating Junction and Storage Temperature Range Tj, Tstg
Thermal Data
Parameter
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Max.
Max.
Symbol
Rthj-c
Rthj-a
REF.
A
b
L4
c
L3
L1
E
Millimeter
Min. Max.
REF.
4.40 4.80 c2
0.76 1.00 b2
0.00 0.30 B D
0.36 0.5
e
1.50 REF.
L
2.29 2.79
9.80 10.4 L2
Millimeter
Min. Max.
1.25 1.45
1.17 1.47
8.6 9.0
2.54 REF.
14.6 15.8
0˚ 8˚
1.27 REF.
Ratings
30
±20
55
35
215
62.5
0.5
-55 ~ +150
Unit
V
V
A
A
A
W
W/
Value
2.0
62
Unit
/W
/W
GU60N03
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