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PDF MB85R256H Data sheet ( Hoja de datos )
| Número de pieza | MB85R256H | |
| Descripción | Memory FRAM CMOS 256 K (32 K X 8) Bit | |
| Fabricantes | Fujitsu Media Devices | |
| Logotipo |  |
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FUJITSU SEMICONDUCTOR
DATA SHEET
Memory FRAM
CMOS
256 K (32 K × 8) Bit
MB85R256H
DS05-13106-1E
■ DESCRIPTIONS
The MB85R256H is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 32,768 words x
8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile
memory cells.
Unlike SRAM, MB85R256H is able to retain data without back-up battery.
The memory cells used for the MB85R256H has improved at least 1010 times of read/write access per bit,
significantly outperforming FLASH memory and E2PROM in durability.
The MB85R256H uses a pseudo - SRAM interface compatible with conventional asynchronous SRAM.
■ FEATURES
• Bit configuration: 32,768 words x 8 bits
• Read/write durability: 1010 times/bit (Min)
• Peripheral circuit CMOS construction
• Operating power supply voltage: 2.7 V to 3.6 V
• Operating temperature range: −40 °C to +85 °C
• 28-pin, SOP flat package
• 28-pin, TSOP(1) flat package
Copyright©2006 FUJITSU LIMITED All rights reserved
1 page  
MB85R256H
■ ABSOLUTE MAXIMUM RANGES
Parameter
Symbol
Rating
Min Max
Unit
Power supply voltage
Input voltage
Output voltage
Operating temperature
Storage temperature
VCC
VIN
VOUT
TA
Tstg
− 0.5
− 0.5
− 0.5
− 40
− 40
+ 4.0
VCC + 0.5
VCC + 0.5
+ 85
+ 125
V
V
V
°C
°C
WARNING: Semiconductor devices can be permanently damaged by application of stress (voltage, current,
temperature, etc.) in excess of absolute maximum ratings. Do not exceed these ratings.
■ RECOMMENDED OPERATING CONDITIONS
Parameter
Value
Symbol
Unit
Min Typ Max
Power supply voltage
VCC 2.7 3.3 3.6 V
High level input voltage
VIH 0.8 × VCC ⎯ VCC + 0.5 V
Low level input voltage
VIL
− 0.5
⎯
+ 0.6
V
Operating temperature
TA
− 40
⎯
+ 85
°C
WARNING: The recommended operating conditions are required in order to ensure the normal operation of the
semiconductor device. All of the device’s electrical characteristics are warranted when the device is
operated within these ranges.
Always use semiconductor devices within their recommended operating condition ranges. Operation
outside these ranges may adversely affect reliability and could result in device failure.
No warranty is made with respect to uses, operating conditions, or combinations not represented on
the data sheet. Users considering application outside the listed conditions are advised to contact their
FUJITSU representatives beforehand.
5
5 Page 
MB85R256H
■ PACKAGE DIMENSIONS
28-pin plastic SOP
(FPT-28P-M17)
Lead pitch
Package width ×
package length
Lead shape
1.27 mm
8.6 × 17.75 mm
Gullwing
Sealing method
Plastic mold
Mounting height
2.80 mm MAX
Weight
Code
(Reference)
0.82 g
P-SOP28-8.6×17.75-1.27
28-pin plastic SOP
(FPT-28P-M17)
*1 17.75
+0.25
–0.20
.699
+.010
–.008
28
Note 1) *1 : These dimensions include resin protrusion.
Note 2) *2 : These dimensions do not include resin protrusion.
Note 3) Pins width and pins thickness include plating thickness.
Note 4) Pins width do not include tie bar cutting remainder.
0.17
+0.03
–0.04
.007
+.001
–.002
15
INDEX
11.80±0.30
(.465±.012)
*2 8.60±0.20
(.339±.008)
1
1.27(.050)
0.47±0.08
(.019±.003)
14
0.13(.005) M
0.10(.004)
C 2002 FUJITSU LIMITED F28048S-c-3-4
Details of "A" part
2.65±0.15
(.104±.006)
(Mounting
height)
0.25(.010)
"A" 0~8˚
0.80±0.20
(.031±.008)
0.88±0.15
(.035±.006)
0.20±0.15
(.008±.006)
(Stand off)
Dimensions in mm (inches).
Note: The values in parentheses are reference values.
(Continued)
11
11 Page | ||
| Páginas | Total 14 Páginas | |
| PDF Descargar | [ Datasheet MB85R256H.PDF ] | |
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