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PDF LNC802PS Data sheet ( Hoja de datos )
| Número de pieza | LNC802PS | |
| Descripción | GaAlAs Semiconductor Laser | |
| Fabricantes | Panasonic Semiconductor | |
| Logotipo |  |
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Semiconductor Laser
LNC802PS
GaAlAs Semiconductor Laser
Features
Low threshold current
Stable single horizontal mode oscillation
Long lifetime, high reliability
High radiant power : 50mW
Applications
Optical data processing devices
Optical disk memory
Medical equipment
Absolute Maximum Ratings (Ta = 25˚C)
Parameter
Radiant power
Reverse voltage
Laser
PIN
Power dissipation
Operating ambient temperature
Storage temperature
Symbol Ratings
PO 50
VR 1.5
VR (PIN)
30
Pd (PIN)
100
Topr –10 to +60
Tstg – 40 to +80
Unit
mW
V
V
mW
˚C
˚C
ø1.0 min.
ø5.6
+0
–0.025
ø4.3±0.1
ø3.55±0.1
Y
Unit : mm
2
LD
X
1
Junction plane
PD
3
1.0±0.1
Z
Reference slot
Kovar glass
LD pellet
Reference plane
ø1.2 max.
3-ø0.45
2
1
ø2.0
3
Bottom view
1: LD Anode
2: Common Case
3: PD Cathode
Electro-Optical Characteristics (Ta = 25˚C)
Parameter
Symbol
Conditions
min typ max Unit
Threshold current
Ith CW
10 30 50 mA
Operating current
IOP CW PO = 40mW
45 65 100 mA
Operating voltage
VOP CW PO = 40mW
2.0 3.0
V
Oscillation wavelength
λL CW PO = 40mW
815 830 845 nm
Horizontal direction
Radiation angle
Vertical direction
θ//*1
θ⊥*1
CW PO = 40mW
CW PO = 40mW
7 10 13 deg.
18 25 30 deg.
Differential efficiency
η CW PO = 36mW/I(40mW – 4mW) 0.6 1.0 1.5
PIN photo current
IP CW PO = 40mW, VR (PIN) = 5V
Reverse current (DC)
IR VR (PIN) = 15V
Optical axis
X direction θX
CW PO = 40mW
accuracy Y direction θY
CW PO = 40mW
*1 The radiation angle is indicated as half full angles.
–2.0
–3.0
mA
0.1 µA
+2.0 deg.
+3.0 deg.
1
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet LNC802PS.PDF ] | |
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