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GBC328 Schematic ( PDF Datasheet ) - GTM

Teilenummer GBC328
Beschreibung PNP EPITAXIAL TRANSISTOR
Hersteller GTM
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Gesamt 3 Seiten
GBC328 Datasheet, Funktion
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GBC328
PNP SILICON TRANSISTOR
Description
The GBC328 is designed for drive and output-stages of audio amplifiers.
Features
High DC Current Gain: 100~630 @VCE=-1V, IC=-100mA
Complementary to GBC338
Package Dimensions
D
TO-92
E
S1
ISSUED DATE :2005/10/21
REVISED DATE :
S E A T IN G
PLANE
b1
e1
e
b
C
REF.
A
S1
b
b1
C
Millimeter
Min. Max.
4.45 4.7
1.02 -
0.36 0.51
0.36 0.76
0.36 0.51
REF.
D
E
L
e1
e
Millimeter
Min. Max.
4.44 4.7
3.30 3.81
12.70
-
1.150 1.390
2.42 2.66
Absolute Maximum Ratings (TA=25 )
Parameter
Symbol
Collector to Base Voltage
VCBO
Collector to Emitter Voltage
VCEO
Emitter to Base Voltage
VEBO
Collector Current (continuous)
IC
Total Device Dissipation @ TA =25
Derate above 25
PD
Total Device Dissipation @ TC =25
Derate above 25
PD
Operating and Storage Junction Temperature
TJ, Tstg
Thermal Resistance, Junction to Ambient
R JA
Thermal Resistance, Junction to Case
R JC
Ratings
-30
-25
-5
-800
625
5.0
1.5
12
-55 ~ +150
200
83.3
Unit
V
V
V
mA
mW
mW/
W
mW/
/W
/W
Electrical Characteristics (TA = 25 unless otherwise noted)
Symbol
Min. Typ. Max. Unit
Test Conditions
BVCBO
BVCEO
-30 - - V IC=-100uA, IE=0
-25 - - V IC=-10mA, IB=0
BVCES
BVEBO
-30 - - V IC=-100uA, IE=0
-5 - - V IE=-10uA, IC=0
ICBO
-
-
-100
nA VCB=-20V, IE=0
ICES
IEBO
-
-
-100
nA VCE=-25V, VBE=0
-
-
-100
nA VEB=-4V, IC=0
*VCE(sat)
- - -0.7 V IC=-500mA, IB=-50mA
*VBE(on)
*hFE1
- - -1.2 V VCE=-1V, IC=-300mA
100 - 630
VCE=-1V, IC=-100mA
*hFE2
40 -
-
VCE=-1V, IC=-300mA
fT - 260 - MHz VCE=-5V, IC=-10mA, f=100MHz
Cob - 11 - pF VCB=-10V, IE=0, f=1MHz
Classification Of hFE1
Rank
A
Range
100 ~ 250
B
160 ~ 400
C
250 ~ 630
*Pulse Test: Pulse Width 380 s, Duty Cycle
2%
GBC328
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