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PDF G2305 Data sheet ( Hoja de datos )
| Número de pieza | G2305 | |
| Descripción | P-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
| Fabricantes | GTM | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de G2305 (archivo pdf) en la parte inferior de esta página. Total 4 Páginas | ||
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Pb Free Plating Product
CORPORATION ISSUED DATE :2004/10/12
REVISED DATE :2005/03/22B
G2305
P-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS
RDS(ON)
ID
-20V
65m
-4.2A
Description
The G2305 provides the designer with the best combination of fast switching, low on-resistance and
cost-effectiveness.
The G2305 is universally preferred for all commercial-industrial surface mount applications and suited for low
voltage applications such as DC/DC converters.
Features
Super High Dense Cell Design for Extremely Low RDS(ON)
Reliable and Rugged
Applications
Power Management in Notebook Computer
Portable Equipment
Battery Powered System.
Package Dimensions
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current3
Continuous Drain Current3
Pulsed Drain Current1,2
Power Dissipation
Linear Derating Factor
Operating Junction and Storage Temperature Range
Symbol
VDS
VGS
ID @TA=25
ID @TA=70
IDM
PD @TA=25
Tj, Tstg
Thermal Data
Parameter
Thermal Resistance Junction-ambient3 Max.
Symbol
Rthj-a
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
2.70 3.10
2.40 2.80
1.40 1.60
0.35 0.50
0 0.10
0.45 0.55
REF.
G
H
K
J
L
M
Millimeter
Min. Max.
1.90 REF.
1.00 1.30
0.10 0.20
0.40 -
0.85 1.15
0 10
Ratings
-20
12
-4.2
-3.4
-10
1.38
0.01
-55 ~ +150
Unit
V
V
A
A
A
W
W/
Ratings
90
Unit
/W
1/4
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet G2305.PDF ] | |
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