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Número de pieza | 2SK3643 | |
Descripción | SWITCHING N-CHANNEL POWER MOSFET | |
Fabricantes | NEC | |
Logotipo | ||
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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3643
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
The 2SK3643 is N-channel MOS FET device that
features a low on-state resistance and excellent switching
characteristics, and designed for low voltage high current
applications such as DC/DC converter with synchronous
rectifier.
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK3643-ZK
TO-252 (MP-3ZK)
(TO-252)
FEATURES
• Low on-state resistance
RDS(on)1 = 6 mΩ MAX. (VGS = 10 V, ID = 32 A)
RDS(on)2 = 9 mΩ MAX. (VGS = 4.5 V, ID = 32 A)
• Low Ciss: Ciss = 2400 pF TYP.
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
30
Gate to Source Voltage (VDS = 0 V)
VGSS
±20
Drain Current (DC) (TC = 25°C)
Drain Current (pulse) Note1
ID(DC)
ID(pulse)
±64
±256
Total Power Dissipation (TC = 25°C)
PT1 40
Total Power Dissipation
PT2 1.0
Channel Temperature
Tch 150
Storage Temperature
Single Avalanche Current Note2
Single Avalanche Energy Note2
Tstg −55 to +150
IAS 40
EAS 160
V
V
A
A
W
W
°C
°C
A
mJ
Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1%
2. Starting Tch = 25°C, VDD = 15 V, RG = 25 Ω, VGS = 20 → 0 V
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D15971EJ4V0DS00 (4th edition)
Date Published January 2005 NS CP(K)
Printed in Japan
The mark shows major revised points.
2002
1 page 2SK3643
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
12.5
10 VGS = 4.5 V
7.5
10 V
5
2.5
ID = 32 A
Pulsed
0
- 50 - 25 0 25 50 75 100 125 150
Tch - Channel Temperature - °C
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
10000
C iss
1000
C oss
100
C rss
VGS = 0 V
f = 1 MHz
10
0.01
0.1
1
10
VDS - Drain to Source Voltage - V
100
1000
100
10
SWITCHING CHARACTERISTICS
tf
tr
td(on)
VDD = 15 V
VGS = 10 V
RG = 10 Ω
td(off)
1
0.1
1 10
ID - Drain Current - A
100
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
30 12
25 VDD = 24 V
15 V
20
10
8
15 6
VGS
10 4
5
VDS
2
ID = 64 A
00
0 10 20 30 40 50
QG - Gate Charge - nC
1000
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
100
VGS = 10 V
10
0V
1
0.1
0.01
Pulsed
0 0.5 1 1.5
VF(S-D) - Source to Drain Voltage - V
1000
100
REVERSE RECOVERY TIME vs.
DIODE FORWARD CURRENT
di/dt = 100 A/µs
VGS = 0 V
10
1
0.1
1 10
IF - Diode Forward Current - A
100
Data Sheet D15971EJ4V0DS
5
5 Page |
Páginas | Total 8 Páginas | |
PDF Descargar | [ Datasheet 2SK3643.PDF ] |
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