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Número de pieza | RQK0604IGDQA | |
Descripción | Silicon N Channel MOS FET Power Switching | |
Fabricantes | Renesas Technology | |
Logotipo | ||
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RQK0604IGDQA
Silicon N Channel MOS FET
Power Switching
Features
• Low on-resistance
RDS(on) = 111 mΩ typ.(at VGS = 4.5 V, ID = 1 A)
• Low drive current
• High speed switching
• VDSS ≥ 60 V and capable of 2.5 V gate drive
Outline
RENESAS Package code: PLSP0003ZB-A
(Package name: MPAK)
3
1
2
Note: Marking is “IG“.
REJ03G1496-0100
Rev.1.00
Jan 15, 2007
3
D
2
G
S
1
1. Source
2. Gate
3. Drain
Absolute Maximum Ratings
Item
Symbol
Drain to source voltage
VDSS
Gate to source voltage
VGSS
Drain current
Drain peak current
ID
ID(pulse) Note1
Body - drain diode reverse drain current
Channel dissipation
IDR
Pch Note2
Channel temperature
Tch
Storage temperature
Tstg
Notes: 1. PW ≤ 10 µs, Duty cycle ≤ 1%
2. When using the glass epoxy board (FR-4 40 × 40 × 1 mm)
Ratings
60
±12
2
8
2
0.8
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
W
°C
°C
Rev.1.00 Jan 15, 2007 page 1 of 7
1 page RQK0604IGDQA
Dynamic Input Characteristics
80 16
VDD = 10 V
60
25 V
12
50 V
40 VDD = 50 V
25 V
VGS
8
10V
20 4
ID = 2.0 A
Tc = 25°C
0 VDS
0
0 2 4 6 8 10
Gate Charge Qg (nc)
Typical Capacitance vs.
Drain to Source Voltage
1000
VGS = 0 V
f = 1 MHz
Ciss
100
Coss
Crss
10
0 10 20 30 40 50 60
Drain to Source Voltage VDS (V)
Reverse Drain Current vs.
Source to Drain Voltage
10
Pulse Test
Tc = 25°C
8
10 V
6
4.5 V
4 2.5 V
2
VGS = –2.5 V,
–4.5 V,
–10 V
VGS = 0 V
0 0.4 0.8 1.2 1.6 2.0
Source to Drain Voltage VSD (V)
1000
100
Switching Characteristics
VGS = 4.5 V, VDD = 10 V
Rg = 4.7 Ω, duty ≤ 1 %
Tc = 25°C
td(off)
td(on)
10
tr
tf
1
0.01
0.1 1
Drain Current ID (A)
10
Input Capacitance vs.
Gate to Source Voltage
700
650
600
550
500
450 VDS = 0 V
f = 1 MHz
400
–10 –8 –6 –4 –2 0 2 4 6 8 10
Gate to Source Voltage VGS (V)
Body-Drain Diode Forward Voltage vs.
Case Temperature
0.7
VGS = 0
0.6
0.5
0.4 ID = 10 mA
0.3
1 mA
0.2
0.1
0
–25 0 25 50 75 100 125 150
Case Temperature Tc (°C)
Rev.1.00 Jan 15, 2007 page 5 of 7
5 Page |
Páginas | Total 8 Páginas | |
PDF Descargar | [ Datasheet RQK0604IGDQA.PDF ] |
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RQK0604IGDQA | Silicon N Channel MOS FET Power Switching | Renesas Technology |
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