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N32T1630C1E Schematic ( PDF Datasheet ) - NanoAmp Solutions

Teilenummer N32T1630C1E
Beschreibung 32Mb Ultra-Low Power Asynchronous CMOS PSRAM
Hersteller NanoAmp Solutions
Logo NanoAmp Solutions Logo 




Gesamt 14 Seiten
N32T1630C1E Datasheet, Funktion
www.DataSheet4U.com
NanoAmp Solutions, Inc.
1982 Zanker Road, San Jose, CA 95112
ph: 408-573-8878, FAX: 408-573-8877
www.nanoamp.com
N32T1630C1E
32Mb Ultra-Low Power Asynchronous CMOS PSRAM
2M x 16 bit
Overview
The N32T1630C1E is an integrated memory
device containing a 32 Mbit Pseudo Static Random
Access Memory using a self-refresh DRAM array
organized as 2,097,152 words by 16 bits. It is
designed to be identical in operation and interface
to standard 6T SRAMS. The device is designed for
low standby and operating current and includes a
power-down feature to automatically enter standby
mode. Also included are several other power
saving modes: a deep sleep mode where data is
not retained in the array and partial array refresh
mode where data is retained in a portion of the
array. Both these modes reduce standby current
drain. The device can operate over a very wide
temperature range of -25oC to +85oC.
Features
• Dual voltage for Optimum Performance:
Vccq - 2.7V to 3.3V
Vcc - 2.7V to 3.3V
• Fast Cycle Times
TACC < 60 nS
TACC < 70 nS
• Very low standby current
ISB < 120µA
• Very low operating current
Icc < 25mA
• Dual rail operation
VCCQ and VSSQ for separate I/O power rail
• Compact Space Saving BGA Package
Product Family
Part Number
Package Operating
Type
Temperature
Power
Supply
N32T1630C1EZ 48-BGA -25oC to +85oC 2.7V - 3.3V(VCC)
Speed
60ns
70ns
Standby
Operating
Current (ISB), Current (Icc),
Max Max
120 µA 3 mA @ 1MHz
Figure 1: Pin Configuration
123456
A LB OE A0 A1 A2 ZZ
B I/O8 UB A3 A4 CE I/O0
C I/O9 I/O10 A5 A6 I/O1 I/O2
D VSSQ I/O11 A17 A7 I/O3 VCC
E VCCQ I/O12 NC A16 I/O4 VSS
F I/O14 I/O13 A14 A15 I/O5 I/O6
G I/O15 A19 A12 A13 WE I/O7
H A18 A8
A9 A10 A11 A20
48 Pin BGA (top)
6 x 8 mm
Table 1: Pin Descriptions
Pin Name
A0-A20
WE
CE
ZZ
OE
LB
UB
I/O0-I/O15
VCC
VSS
VCCQ
VSSQ
Pin Function
Address Inputs
Write Enable Input
Chip Enable Input
Deep Sleep Input
Output Enable Input
Lower Byte Enable Input
Upper Byte Enable Input
Data Inputs/Outputs
Power
Ground
Power I/O only
Ground I/O only
(DOC # 14-02-006 Rev C ECN 01-1040
The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.
1






N32T1630C1E Datasheet, Funktion
NanoAmp Solutions, Inc.
Timing of Read Cycle (CE = OE = VIL, WE = ZZ = VIH)
tRC
Address
tAA
tOH
N32T1630C1E
Data Out
Previous Data Valid
Timing Waveform of Read Cycle (WE = ZZ = VIH)
Data Valid
Address
tRC
tAA
CE
OE
LB, UB
Data Out
tCO
tLZ
tOE
tOLZ
tLB, tUB
tBLZ
High-Z
tHZ
tOHZ
tBHZ
Data Valid
(DOC # 14-02-006 Rev C ECN 01-1040
The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.
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N32T1630C1E pdf, datenblatt
NanoAmp Solutions, Inc.
N32T1630C1E
VAR Update and Deep Sleep Timings
Item
ZZ low to WE low
Deep Sleep Mode
Deep Sleep Recovery
Symbol
tZZWE
tZZMIN
tR
Min Max
1
10
200
Unit
us
us
us
Address Patterns for PAR (A3 = 0, A4 = 1)
A2 A1 A0
Active Section
0 1 1 One-quarter of die
0 1 0 One-half of die
x 0 0 Full die
1 1 1 One-quarter of die
1 1 0 One-half of die
Address space
Size
000000h - 07FFFFh 512Kb x 16
000000h - 0FFFFFh 1Mb x 16
000000h - 1FFFFFh 2Mb x 16
180000h - 1FFFFFh 512Kb x 16
100000h - 1FFFFFh 1Mb x 16
Density
8Mb
16Mb
32Mb
8Mb
16Mb
Address Patterns for RMS (A3 = 1, A4 = 1)
A2 A1 A0
Active Section
Address space
Size
0 1 1 One-quarter of die 000000h - 07FFFFh 512Kb x 16
0 1 0 One-half of die
000000h - 0FFFFFh 1Mb x 16
1 1 1 One-quarter of die 180000h - 1FFFFFh 512Kb x 16
1 1 0 One-half of die
100000h - 1FFFFFh 1Mb x 16
Density
8Mb
16Mb
8Mb
16Mb
Low Power ICC Characteristics
Item Symbol
Test
PAR Mode Standby IPAR
Current
RMS Mode
Standby Current
IRMSSB
Deep Sleep Current IZZ
VIN = VCC or 0V,
Chip Disabled, tA= 85oC
VIN = VCC or 0V,
Chip Disabled, tA= 85oC
VIN = VCC or 0V,
Chip in ZZ mode, tA= 85oC
Array
Partition
1/4 Array
1/2 Array
4Mb Device
8Mb Device
Typ Max Unit
75 uA
90
75 uA
90
10 uA
(DOC # 14-02-006 Rev C ECN 01-1040
The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.
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