PDF N256S0830HDA Data sheet ( Hoja de datos )

Número de pieza	N256S0830HDA
Descripción	(N256S0818HDA / N256S0830HDA) 256Kb Low Power Serial SRAMs 32K X 8 bit Organization
Fabricantes	AMI
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No Preview Available ! www.DataSheet4U.com AMI Semiconductor, Inc. ULP Memory Solutions 670 North McCarthy Blvd. Suite 220 Milpitas, CA 95035 PH: 408-935-7777, FAX: 408-935-7770 N256S0818HDA/N256S0830HDA Advance Information 256Kb Low Power Serial SRAMs 32K × 8 bit Organization Overview The AMI Semiconductor serial SRAM family includes several integrated memory devices including this 256Kb serially accessed Static Random Access Memory, internally organized as 32K words by 8 bits. The devices are designed and fabricated using AMI’s advanced CMOS technology to provide both high-speed performance and low power. The devices operate with a single chip select (CS) input and use a simple Serial Peripheral Interface (SPI) serial bus. A single data in and data out line is used along with a clock to access data within the devices. The N256S08xxHDA devices include a HOLD pin that allows communication to the device to be paused. While paused, input transitions will be ignored. The devices can operate over a wide temperature range of -40oC to +85oC and can be available in several standard package offerings. Features • Power Supply Options 1.8V to 3.6V • Very low standby current As low as 200nA • Very low operating current As low as 500uA • Simple memory control Single chip select (CS) Serial input (SI) and serial output (SO) • Flexible operating modes Word read and write Page mode (32 word page) Burst mode (full array) • Organization 32K x 8 bit • Self timed write cycles • Built-in write protection (CS high) • HOLD pin for pausing communication • High reliability Unlimited write cycles • RoHS Compliant Packages Green SOIC and TSSOP Device Options Part Number N256S0818HDA N256S0830HDA Density 256Kb Power Supply (V) 1.8 3.0 Speed (MHz) 20 25 Feature HOLD Typical Standby Current 200nA 1uA Read/Write Operating Current 500 uA @ 1Mhz This is a developmental specification and is subject to change without notice. 1 1 page AMI Semiconductor, Inc. Serial Input Timing CS SCK tCSS tSU SI MSB in tR tHD N256S0818HDA/N256S0830HDA Advance Information tCSD tCLD tF tCSH tSCS LSB in SO Serial Output Timing High-Z CS SCK SO SI Hold Timing tLO tHI tV MSB out Don’t Care tCSH LSB out tDIS CS SCK SO n+2 SI n+2 tHS tHS tHH n+1 tHZ n+1 tHH n n High-Z Don’t Care tHV n n-1 tSU n n-1 HOLD This is a developmental specification and is subject to change without notice. 5 5 Page AMI Semiconductor, Inc. N256S0818HDA/N256S0830HDA Advance Information WRITE Status Register Instruction (WRSR) This instruction provides the ability to write the status register and select among several operating modes. Several of the register bits must be set to a low ‘0’ if any of the other bits are written. The timing sequence to write to the status register is shown below, followed by the organization of the status register. WRITE Status Register Sequence CS SCK SI 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 Instruction Status Register Data In 0000000176543210 SO High-Z Status Register Bit 7 Bit 6 Bit 5 Bit 4 Bit 3 Bit 2 Bit 1 Bit 0 Mode 0 0 = Word Mode (Default) 1 0 = Page Mode 0 1 = Burst Mode 1 1 = Reserved Reserved Must = 0 Reserved Must = 0 Hold Function 0 = Hold (Default) 1 = No Hold This is a developmental specification and is subject to change without notice. 11 11 Page

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