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SPI16N50C3 Schematic ( PDF Datasheet ) - Infineon Technologies

Teilenummer SPI16N50C3
Beschreibung Power Transistor
Hersteller Infineon Technologies
Logo Infineon Technologies Logo 




Gesamt 14 Seiten
SPI16N50C3 Datasheet, Funktion
SPP16N50C3
SPI16N50C3, SPA16N50C3
Cool MOS™ Power Transistor
Feature
New revolutionary high voltage technology
Ultra low gate charge
VDS @ Tjmax
RDS(on)
ID
560
0.28
16
V
A
Periodic avalanche rated
PG-TO220FP PG-TO262
PG-TO220
Extreme dv/dt rated
2
Ultra low effective capacitances
Improved transconductance
P-TO220-3-31
3
12
PG-TO-220-3-31;-3-111: Fully isolated package (2500 VAC; 1 minute)
P-TO220-3-1
123
Type
SPP16N50C3
SPI16N50C3
SPA16N50C3
Package
PG-TO220
PG-TO262
PG-TO220FP
Ordering Code
Q67040-S4583
Q67040-S4582
SP000216351
Marking
16N50C3
16N50C3
16N50C3
Maximum Ratings
Parameter
Continuous drain current
TC = 25 °C
TC = 100 °C
Pulsed drain current, tp limited by Tjmax
Avalanche energy, single pulse
ID=8, VDD=50V
Avalanche energy, repetitive tAR limited by Tjmax2)
ID=16A, VDD=50V
Avalanche current, repetitive tAR limited by Tjmax
Gate source voltage
Gate source voltage AC (f >1Hz)
Power dissipation, TC = 25°C
Operating and storage temperature
Reverse diode dv/dt 6)
Symbol
ID
ID puls
EAS
EAR
IAR
VGS
VGS
Ptot
Tj , Tstg
dv/dt
Value
SPP_I
SPA
16 161)
10 101)
48 48
460 460
0.64 0.64
16 16
±20 ±20
±30 ±30
160 34
-55...+150
15
Unit
A
A
mJ
A
V
W
°C
V/ns
Rev. 3.2
page 1
2009-12-22






SPI16N50C3 Datasheet, Funktion
5 Transient thermal impedance
ZthJC = f (tp)
parameter: D = tp/T
10 1
K/W
10 0
SPP16N50C3
SPI16N50C3, SPA16N50C3
6 Transient thermal impedance FullPAK
ZthJC = f (tp)
parameter: D = tp/t
10 1
K/W
10 0
10 -1
10 -2
10 -3
D = 0.5
D = 0.2
D = 0.1
D = 0.05
D = 0.02
D = 0.01
single pulse
10 -1
10 -2
10 -3
D = 0.5
D = 0.2
D = 0.1
D = 0.05
D = 0.02
D = 0.01
single pulse
10
-4
10
-7
10 -6
10 -5
10 -4
10 -3
7 Typ. output characteristic
ID = f (VDS); Tj=25°C
parameter: tp = 10 µs, VGS
60
A
20V
7V
6.5V
s 10 -1
tp
40 6V
30
5.5V
20
5V
10 4.5V
10
-4
10
-7
10 -6
10 -5
10 -4
10 -3
10 -2
10 -1
s 10 1
tp
8 Typ. output characteristic
ID = f (VDS); Tj=150°C
parameter: tp = 10 µs, VGS
35
A
20V
7V
25 6V
5V
20
15
4.5V
10
4V
5
00
5
10 15 V
25
VDS
Rev. 3.2
page 6
00
5
10 15 V
25
VDS
2009-12-22

6 Page









SPI16N50C3 pdf, datenblatt
PG-TO220-3 (Fully isolated)
SPP16N50C3
SPI16N50C3, SPA16N50C3
24
Dimensions in mm/ inches
Rev. 3.2
page 12
2009-12-20

12 Page





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