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PDF SPI100N03S2L-03 Data sheet ( Hoja de datos )
| Número de pieza | SPI100N03S2L-03 | |
| Descripción | OptiMOS Power-Transistor | |
| Fabricantes | Infineon Technologies | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de SPI100N03S2L-03 (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
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SPI100N03S2L-03
SPP100N03S2L-03,SPB100N03S2L-03
OptiMOS® Power-Transistor
Feature
• N-Channel
• Enhancement mode
• Logic Level
• Excellent Gate Charge x RDS(on)
product (FOM)
• Superior thermal resistance
• 175°C operating temperature
• Avalanche rated
• dv/dt rated
P- TO262 -3-1
Product Summary
VDS 30 V
RDS(on) max. SMD version 2.7 mΩ
ID 100 A
P- TO263 -3-2
P- TO220 -3-1
Type
Package
Ordering Code
SPP100N03S2L-03 P- TO220 -3-1 Q67042-S4056
SPB100N03S2L-03 P- TO263 -3-2 Q67042-S4055
SPI100N03S2L-03 P- TO262 -3-1 Q67042-S4094
Marking
PN03L03
PN03L03
PN03L03
Maximum Ratings, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Continuous drain current 1)
TC=25°C
ID
Pulsed drain current
TC=25°C
Avalanche energy, single pulse
ID=80 , VDD=25V, RGS=25Ω
Repetitive avalanche energy, limited by Tjmax2)
Reverse diode dv/dt
IS=100A, VDS=24V, di/dt=200A/µs, Tjmax=175°C
Gate source voltage
Power dissipation
TC=25°C
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
ID puls
EAS
EAR
dv/dt
VGS
Ptot
Tj , Tstg
Value
100
100
400
810
30
6
±20
300
-55... +175
55/175/56
Unit
A
mJ
kV/µs
V
W
°C
Page 1
2003-05-09
1 page  
SPI100N03S2L-03
SPP100N03S2L-03,SPB100N03S2L-03
5 Typ. output characteristic
ID = f (VDS); Tj=25°C
parameter: tp = 80 µs
SPP100N03S2L-03
240 Ptot = 300W
A
i hg f
200
180
160
140
120
100
80
VGS [V]
a 2.5
b 2.8
c 3.0
ed
e
3.2
3.5
f 3.8
g 4.0
h 4.5
d i 10.0
60 c
40
20 b
a
0
0
0.5
1
1.5
2
2.5
3
3.5
4
V
5
VDS
7 Typ. transfer characteristics
ID= f ( VGS ); VDS≥ 2 x ID x RDS(on)max
parameter: tp = 80 µs
200
A
160
140
120
100
80
60
40
20
0
0 0.5 1 1.5 2 2.5 3
V
4
VGS
6 Typ. drain-source on resistance
RDS(on) = f (ID)
parameter: VGS
SPP100N03S2L-03
10
Ω de
8
7
6
5f
4g
3h
2
VGS [V] =
1de f
3.2 3.5 3.8
gh i
4.0 4.5 10.0
i
0
0
20 40 60 80 100 120 140 A
180
ID
8 Typ. forward transconductance
gfs = f(ID); Tj=25°C
parameter: gfs
260
S
220
200
180
160
140
120
100
80
60
40
20
0
0
40
80 120 160 A
240
ID
Page 5
2003-05-09
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet SPI100N03S2L-03.PDF ] | |
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