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PDF HAT2108R Data sheet ( Hoja de datos )
| Número de pieza | HAT2108R | |
| Descripción | Silicon N Channel Power MOS FET High Speed Power Switching | |
| Fabricantes | Renesas Technology | |
| Logotipo |  |
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Regarding the change of names mentioned in the document, such as Hitachi
Electric and Hitachi XX, to Renesas Technology Corp.
The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas
Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.)
Accordingly, although Hitachi, Hitachi, Ltd., Hitachi Semiconductors, and other Hitachi brand
names are mentioned in the document, these names have in fact all been changed to Renesas
Technology Corp. Thank you for your understanding. Except for our corporate trademark, logo and
corporate statement, no changes whatsoever have been made to the contents of the document, and
these changes do not constitute any alteration to the contents of the document itself.
Renesas Technology Home Page: http://www.renesas.com
Renesas Technology Corp.
Customer Support Dept.
April 1, 2003
1 page  
HAT2108R
Electrical Characteristics
(Ta = 25°C)
Item
Symbol Min
Drain to source breakdown voltage
Gate to source breakdown voltage
Gate to source leak current
Zero gate voltage drain current
Gate to source cutoff voltage
Static drain to source on state
resistance
Forward transfer admittance
Input capacitance
V(BR)DSS
V(BR)GSS
I
GSS
I
DSS
VGS(off)
RDS(on)
RDS(on)
|yfs|
Ciss
28
± 12
—
—
0.4
—
—
17
—
Output capacitance
Coss —
Reverse transfer capacitance
Crss —
Total gate charge
Qg —
Gate to source charge
Qgs —
Gate to drain charge
Qgd —
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body–drain diode forward voltage
Body–drain diode reverse recovery
time
td(on)
tr
td(off)
tf
VDF
trr
—
—
—
—
—
—
Notes: 4. Pulse test
Typ
—
—
—
—
—
12
15
28
2200
400
240
16
5.2
4.8
30
35
70
25
0.85
40
Max
—
—
±10
1
1.4
15
22
—
—
—
—
—
—
—
—
—
—
—
1.11
—
Unit
V
V
µA
µA
V
mΩ
mΩ
S
pF
pF
pF
nc
nc
nc
ns
ns
ns
ns
V
ns
Test Conditions
ID = 10 mA, VGS = 0
IG = ±100 µA, VDS = 0
V = ±10 V, V = 0
GS DS
V = 28 V, V = 0
DS GS
VDS = 10 V, I D = 1 mA
ID = 5.5 A, VGS = 4 V Note4
ID = 5.5 A, VGS = 2.5 V Note4
ID = 5.5 A, VDS = 10 V Note4
V = 10 V
DS
VGS = 0
f = 1 MHz
VDD = 10 V
VGS = 4 V
ID = 11 A
VGS = 4 A, ID = 5.5 A
VDD ≅ 10 V
RL = 1.81 Ω
Rg = 4.7 Ω
IF = 11 A, VGS = 0 Note4
IF = 11 A, VGS = 0
diF/ dt = 50 A/µs
Rev.3, Aug. 2002, page 3 of 5
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet HAT2108R.PDF ] | |
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