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Teilenummer | C50J |
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Beschreibung | (C50A - C50K) 50A AUTOMOTIVE CELL DIODE | |
Hersteller | Won-Top Electronics | |
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Gesamt 2 Seiten www.DataSheet4U.com
WTE
POWER SEMICONDUCTORS
Features
Diffused Junction
Low Leakage
Low Cost
High Surge Current Capability
Die Size 220 mil HEX
C50A – C50K Pb
50A AUTOMOTIVE CELL DIODE
D
Anode +
C
E
Mechanical Data
Case: Cell Diode Passivated with Silicon Rubber
Terminal: Copper Disc with Ag Plated
Polarity: Indicated by Large Disc On Cathode
Side, Add “R” Suffix to Indicate Reverse Polarity,
i.e. C50AR
Mounting Position: Any
Lead Free: For RoHS / Lead Free Version,
Add “-LF” Suffix to Part Number, See Page 2
B
A
C50
Dim Min Max
A — 7.40
B — 6.55
C 0.75 —
D 1.0 —
E — 2.2
All Dimensions in mm
Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise specified
Single Phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic
Symbol C50A C50B C50D C50G C50J C50K Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
50 100 200 400 600 800 V
RMS Reverse Voltage
VR(RMS)
Average Rectified Output Current @TC = 150°C
IO
35
70 140 280 420 560 V
50 A
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave superimposed on
rated load (JEDEC Method)
IFSM
500 A
Forward Voltage
@IF = 100A
VFM
Peak Reverse Current
At Rated DC Blocking Voltage
@TA = 25°C
IRM
Typical Thermal Resistance Junction to Ambient
RθJA
Operating and Storage Temperature Range
TJ, TSTG
1.08
3.0
1.0
-40 to +150
V
µA
°C/W
°C
C50A – C50K
1 of 2
© 2006 Won-Top Electronics
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Seiten | Gesamt 2 Seiten | |
PDF Download | [ C50J Schematic.PDF ] |
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