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PDF NP160N04TUG Data sheet ( Hoja de datos )
| Número de pieza | NP160N04TUG | |
| Descripción | SWITCHING N-CHANNEL POWER MOS FET | |
| Fabricantes | NEC | |
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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
NP160N04TUG
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
The NP160N04TUG is N-channel MOS Field Effect Transistor designed for high current switching applications.
ORDERING INFORMATION
PART NUMBER
LEAD PLATING
PACKING
NP160N04TUG-E1-AY Note
NP160N04TUG-E2-AY Note
Pure Sn (Tin)
Tape 800 p/reel
Note Pb-free (This product does not contain Pb in the external electrode).
PACKAGE
TO-263-7pin (MP-25ZT) typ. 1.5 g
FEATURES
• Super low on-state resistance
RDS(on) = 1.6 mΩ TYP. / 2.0 mΩ MAX. (VGS = 10 V, ID = 80 A)
• High Current Rating
ID(DC) = ±160 A
(TO-263-7pin)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
Gate to Source Voltage (VDS = 0 V)
VGSS
Drain Current (DC) (TC = 25°C)
Drain Current (pulse) Note1
ID(DC)
ID(pulse)
Total Power Dissipation (TC = 25°C)
PT1
Total Power Dissipation (TA = 25°C)
PT2
Channel Temperature
Tch
Storage Temperature
Single Avalanche Energy Note2
Repetitive Avalanche Current Note3
Repetitive Avalanche Energy Note3
Tstg
EAS
IAR
EAR
40
±20
±160
±640
220
1.8
175
−55 to +175
372
61
372
V
V
A
A
W
W
°C
°C
mJ
A
mJ
Notes 1. PW ≤ 10 μs, Duty Cycle ≤ 1%
2. Starting Tch = 25°C, VDD = 20 V, RG = 25 Ω, VGS = 20 → 0 V, L = 100 μH
3. RG = 25 Ω, Tch(peak) ≤ 150°C
THERMAL RESISTANCE
Channel to Case Thermal Resistance
Channel to Ambient Thermal Resistance
Rth(ch-C)
Rth(ch-A)
0.68
83.3
°C/W
°C/W
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D18754EJ1V0DS00 (1st edition)
Date Published May 2007 NS CP(K)
Printed in Japan
2007
1 page  
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
5
VGS = 10 V
ID = 80 A
4
3
2
1
0
-75
Pulsed
-25 25 75 125 175
Tch - Channel Temperature - °C
225
1000
SWITCHING CHARACTERISTICS
100
td(off)
td(on)
10 tr
tf
VDD = 20 V
VGS = 10 V
RG = 0 Ω
1
0.1 1
10 100
ID - Drain Current - A
1000
1000
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
100
VGS = 10 V
10
0V
1
Pulsed
0.1
0 0.5 1 1.5
VF(S-D) - Source to Drain Voltage - V
NP160N04TUG
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
100000
10000
Ciss
Coss
1000
Crss
VGS = 0 V
f = 1 MHz
100
0.01
0.1
1
10
VDS - Drain to Source Voltage - V
100
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
40 12
35 VDD = 32 V
15 V
30 8 V
9
25
20 6
VGS
15
10
5
0
0
VDS
50 100
3
ID = 160 A
Pulsed
0
150 200
QG - Gate Charge - nC
1000
REVERSE RECOVERY TIME vs.
DIODE FORWARD CURRENT
100
10
di/dt = 100 A/μs
VGS = 0 V
1
0.1 1
10
100 1000
IF - Diode Forward Current - A
Data Sheet D18754EJ1V0DS
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet NP160N04TUG.PDF ] | |
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