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PDF GL159 Data sheet ( Hoja de datos )
| Número de pieza | GL159 | |
| Descripción | PNP SILICON PLANAR HIGH PERFORMANCE TRANSISTOR | |
| Fabricantes | GTM | |
| Logotipo |  |
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CORPORATION ISSUED DATE :2005/07/19
REVISED DATE :2005/12/09C
GL159
PNP SILICON PLANAR HIGH CURRENT TRANSISTOR
Description
The GL159 is designed for general purpose switching and amplifier applications.
Features
5 Amps continuous current, up to 15Amps peak current
Excellent gain characteristic specified up to 10Amps
Very low saturation voltages
Package Dimensions
SOT-223
REF.
A
C
D
E
I
H
Millimeter
Min. Max.
6.70 7.30
2.90 3.10
0.02 0.10
0 10
0.60 0.80
0.25 0.35
REF.
B
J
1
2
3
4
5
Millimeter
Min. Max.
13 TYP.
2.30 REF.
6.30 6.70
6.30 6.70
3.30 3.70
3.30 3.70
1.40 1.80
Absolute Maximum Ratings at Ta = 25
Parameter
Symbol
Junction Temperature
Tj
Ratings
+150
Unit
Storage Temperature
Tstg
-55~+150
Collector to Base Voltage
VCBO
-100
V
Collector to Emitter Voltage
VCEO
-60
V
Emitter to Base Voltage
VEBO
-6
V
Collector Current (DC)
IC
-5
A
Collector Current (Pulse)
IC
-15
A
Total Power Dissipation
PD
3
W
*The power which can be dissipated assuming the device is mounted in a typical manner on a P.C.B. with copper equal to 4
square inch minimum.
Electrical Characteristics(Ta = 25 ,unless otherwise stated)
Symbol
BVCBO
*BVCEO
BVEBO
ICBO
ICES
IEBO
*VCE(sat)1
*VCE(sat)2
*VCE(sat)3
*VCE(sat)4
*VBE(sat)
*VBE(on)
*hFE1
*hFE2
*hFE3
*hFE4
fT
Min.
-100
-60
-6
-
-
-
-
-
-
-
-
-
100
100
75
10
-
Typ.
-
-
-
-
-
-
-20
-85
-155
-370
-1.08
-0.935
200
200
90
25
120
Max.
-
-
-
-50
-50
-10
-50
-140
-210
-460
-1.24
-1.07
300
-
Unit
V
V
V
nA
nA
nA
mV
mV
mV
mV
V
V
MHz
Test Conditions
IC=-100uA , IE=0
IC=-10mA, IB=0
IE=-100uA ,IC=0
VCB=-80V, IE=0
VCES=-60V
VEB=-6V, IC=0
IC=-100mA, IB=-10mA
IC=-1A, IB=-100mA
IC=-2A, IB=-200mA
IC=-5A, IB=-500mA
IC=-5A, IB=-500mA
VCE=-1V, IC=-5A
VCE=-1V, IC=-10mA
VCE=-1V, IC=-2A
VCE=-1V, IC=-5A
VCE=-1V, IC=-10A
VCE=-10V, IC=-100mA, f=50MHz
1/2
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| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet GL159.PDF ] | |
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