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GJ1386 Schematic ( PDF Datasheet ) - GTM

Teilenummer GJ1386
Beschreibung PNP EPITAXIAL SILICON TRANSISTOR
Hersteller GTM
Logo GTM Logo 




Gesamt 2 Seiten
GJ1386 Datasheet, Funktion
www.DataSheet4U.com
ISSUED DATE :2005/07/25
REVISED DATE :
GJ1386
PNP EPITAXIAL SILICON TRANSISTOR
Description
The GJ1386 is designed for low frequency applications.
Features
Low VCE(sat) =-0.55V(Typ.) (IC/IB=-4A/-0.1A)
Excellent DC current gain characteristics
Package Dimensions
TO-252
Absolute Maximum Ratings at Ta = 25
Parameter
Symbol
Junction Temperature
Tj
Storage Temperature
Tstg
Collector to Base Voltage
VCBO
Collector to Emitter Voltage
VCEO
Emitter to Base Voltage
VEBO
Collector Current
IC
*Collector Current (Pulse)
IC
Total Power Dissipation (TC=25 )
PD
Electrical Characteristics (Ta = 25 )
Symbol
Min. Typ. Max.
BVCBO
BVCEO
-30 -
-20 -
-
-
BVEBO
ICBO
-6 -
-
- - -500
IEBO
- - -500
*VCE(sat)
- - -1
*hFE
82 - 580
fT - 120 -
Cob - 60 -
Unit
V
V
V
nA
nA
V
MHz
pF
Classification Of hFE
Rank
P
Range
82 - 180
Q
120 - 270
REF.
A
B
C
D
E
F
S
Millimeter
Min. Max.
6.40 6.80
5.20 5.50
6.80 7.20
2.40 3.00
2.30 REF.
0.70 0.90
0.60 0.90
REF.
G
H
J
K
L
M
R
Millimeter
Min. Max.
0.50 0.70
2.20 2.40
0.45 0.55
0 0.15
0.90 1.50
5.40 5.80
0.80 1.20
Ratings
+150
-55~+150
-30
-20
-6
-5
-10
20
Unit
V
V
V
A
A
W
Test Conditions
IC=-50uA , IE=0
IC=-1mA, IB=0
IE=-50uA ,IC=0
VCB=-20V, IE=0
VEB=-5V, IC=0
IC=-4A, IB=-0.1A
VCE=-2V, IC=-0.5A
VCE=-6V, IE=50mA, f=30MHz
VCB=-20V, IE=0, f=1MHz
* Pulse Test: Pulse Width 380 s, Duty Cycle
2%
R
180 - 390
E
370 - 580
GJ1386
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