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Teilenummer | GI405 |
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Beschreibung | P-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
Hersteller | GTM | |
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Gesamt 4 Seiten www.DataSheet4U.com
Pb Free Plating Product
ISSUED DATE :2006/12/06
REVISED DATE :
GI405
P-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS
RDS(ON)
ID
-30V
32m
-18A
Description
The GI405 uses advanced trench technology to provide excellent on-resistance, low gate charge and low gate
resistance.
The through-hole version (TO-251) is available for low-profile applications and suited for high current load
applications.
Features
*Simple Drive Requirement
*Lower On-resistance
*Fast Switching Characteristic
Package Dimensions
TO-251
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
6.40 6.80
5.20 5.50
6.80 7.20
7.20 7.80
2.30 REF.
0.60 0.90
REF.
G
H
J
K
L
M
Millimeter
Min. Max.
0.50 0.70
2.20 2.40
0.45 0.55
0.45 0.60
0.90 1.50
5.40 5.80
Absolute Maximum Ratings
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current, VGS@10V
Continuous Drain Current, VGS@10V
Pulsed Drain Current1
ID @TC=25
ID @TC=100
IDM
Total Power Dissipation
PD @TC=25
Linear Derating Factor
Single Pulse Avalanche Energy2
EAS
Single Pulse Avalanche Current
IAS
Operating Junction and Storage Temperature Range Tj, Tstg
Ratings
-30
±20
-18
-14
-40
60
0.4
61
-35
-55 ~ +175
Unit
V
V
A
A
A
W
W/
mJ
A
Thermal Data
Parameter
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Max.
Max.
Symbol
Rthj-c
Rthj-a
Value
2.5
50
Unit
/W
/W
GI405
Page: 1/4
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Seiten | Gesamt 4 Seiten | |
PDF Download | [ GI405 Schematic.PDF ] |
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