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GI1952 Schematic ( PDF Datasheet ) - GTM

Teilenummer GI1952
Beschreibung PNP HIGH SPEED SWITCHING TRANSISTOR
Hersteller GTM
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Gesamt 3 Seiten
GI1952 Datasheet, Funktion
www.DataSheet4U.com
ISSUED DATE :2005/10/03
REVISED DATE :
GI1952
PNP HIGH SPEED SWITCHING TRANSISTOR
Description
The GI1952 is designed for high speed switching applications.
Features
Low saturation voltage, typically VCE(sat) =-0.2V at IC/IB=-3A/-0.15A
High speed switching, typically tf =0.15 s at IC=-3A
Wide SOA
Complements to GI5103
Package Dimensions
TO-251
Absolute Maximum Ratings (TA=25 )
Parameter
Symbol
Collector to Base Voltage
VCBO
Collector to Emitter Voltage
VCEO
Emitter to Base Voltage
VEBO
Collector Current (DC)
IC
Collector Current (Pulse)
IC
Total Device Dissipation (TA=25 )
PD
Total Device Dissipation (TC=25 )
PD
Junction Temperature
TJ
Storage Temperature
Tstg
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
6.40 6.80
5.20 5.50
6.80 7.20
7.20 7.80
2.30 REF.
0.60 0.90
REF.
G
H
J
K
L
M
Millimeter
Min. Max.
0.50 0.70
2.20 2.40
0.45 0.55
0.45 0.60
0.90 1.50
5.40 5.80
Ratings
-100
-60
-5
-5
-10
1
10
150
-55 ~ +150
Unit
V
V
V
A
A
W
W
Electrical Characteristics (TA = 25
Symbol
Min.
Typ.
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*VCE(sat)1
*VCE(sat)2
*VBE(sat)1
*VBE(sat)2
*hFE1
*hFE2
fT
Cob
-100
-60
-5
-
-
-
-
-
-
120
40
-
-
-
-
-
-
-
-
-
-
-
-
-
80
130
unless otherwise noted)
Max.
Unit
Test Conditions
- V IC=-50uA, IE=0
- V IC=-1mA, IB=0
- V IE=-50uA, IC=0
-10 uA VCB=-100V, IE=0
-10 uA VEB=-5V, IC=0
-0.3 V IC=-3A, IB=-0.15A
-0.5 V IC=-4A, IB=-0.2A
-1.2 V IC=-3A, IB=-0.15A
-1.5 V IC=-4A, IB=-0.2A
270 VCE=-2V, IC=-1A
- VCE=-2V, IC=-3A
- MHz VCE=-10V, IE=0.5A, f=30MHz
- pF VCB=-10V, IE=0, f=1MHz
GI1952
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