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PDF FD0200YR Data sheet ( Hoja de datos )
| Número de pieza | FD0200YR | |
| Descripción | DIAC | |
| Fabricantes | Fagor | |
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FD0200YR
DIAC
Dimensions in mm.
DO-35
Glass Axial
Package
• Silicon bi-directional trigger device
intended for use in thyristor (SCR and
TRIAC) trigger circuits, energy saving
lighting circuits and other switching
functions.
3.60 ± 0.55
54.4 ± 0.55
Mounting instructions
1. Min. distance from body to soldering point,
4 mm.
2. Max. solder temperature, 250 °C.
3. Max. soldering time, 3.5 sec.
4. Do not bend lead at a point closer than
2 mm. to the body.
BREAKOVER VOLTAGE ON-STATE CURRENT
32 V 2.0 Amps
SPECIAL FEATURES:
• Low breakover current.
• Excellent symmetry.
• Very low leakage current.
MARKING CODE
P1
Absolute Maximum Ratings, according to IEC publication No. 134
PARAMETER
CONDITIONS
Ptot Total Power Dissipation
Ta = 65 ºC
ITRM Repetitive peak on-state current tp = 20 µs, f = 100 Hz
Tstg Storage Temperature Range
Tj Operating Junction Temperature
Min. Typ. Max. Unit
150 mW
2A
-40 +125 ºC
-40 +125 ºC
Thermal Resistance
R th (j-a)
R th (j-l)
PARAMETER
Junction to Ambient
Junction to leads
CONDITIONS
Min. Typ. Max. Unit
400 ºC/W
150 ºC/W
Electrical Characteristics at Tamb = 25 ºC
VBO
VBO+ - -VBO-
∆V±
PARAMETER
Breakover Voltage *
Breakover Voltage Symmetry
Dynamic breakover voltage *
VO Output Voltage *
IBO Breakover Current *
tr Rise Time *
IB Leakage Current *
IP Peak Current *
* Applicable to both forward and reverse directions.
** Connected in parallel with the devices.
CONDITIONS
Min. Typ. Max. Unit
IBO, C = 22nF ** (see Figure 1)
IBO, C = 22nF ** (see Figure 1)
∆I = [IBO to IF = 10 mA]
(see Figure 1)
28
5
32 36
±3
V
V
V
(see Figure 3)
5
V
C = 22 nF **
(see Figure 4)
50 µA
1.5 µs
VB = 0.5 VBO max
(see Figure 1)
10 µA
see Figure 3 (Gate)
0.3
A
Feb - 03
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