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PDF MID122 Data sheet ( Hoja de datos )
| Número de pieza | MID122 | |
| Descripción | TECHNICAL SPECIFICATIONS OF NPN DARLINGTON TRANSISTOR | |
| Fabricantes | Dc Components | |
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DC COMPONENTS CO., LTD.
R DISCRETE SEMICONDUCTORS
MID122
TECHNICAL SPECIFICATIONS OF NPN DARLINGTON TRANSISTOR
Description
Designed for use in general purpose amplifier and
low speed switching applications.
Pinning
1 = Base
2 = Collector
3 = Emitter
Absolute Maximum Ratings(TA=25oC)
Characteristic
Symbol Rating
Collector-Base Voltage
VCBO
100
Collector-Emitter Voltage
VCEO
100
Emitter-Base Voltage
VEBO
5
Collector Current
Total Power Dissipation(TC=25oC)
IC
PD
8
20
Junction Temperature
TJ +150
Storage Temperature
TSTG -55 to +150
Unit
V
V
V
A
W
oC
oC
TO-251
.268(6.80)
.252(6.40)
.217(5.50)
.205(5.20)
.022(0.55)
.018(0.45)
.284(7.20)
.268(6.80)
2
.063(1.60)
.055(1.40)
123
.035 Max
(0.90)
.256
(6.50)
Min
.032
(0.80)
Max
.181 Typ
(4.60)
.059(1.50)
.035(0.90)
.024(0.60)
.018(0.45)
.095(2.40)
.087(2.20)
Dimensions in inches and (millimeters)
Electrical Characteristics
(Ratings at 25oC ambient temperature unless otherwise specified)
Characteristic
Symbol Min Typ Max Unit
Test Conditions
Collector-Base Breakdown Voltage
BVCBO 100
-
- V IC=1mA
Collector-Emitter Breakdown Voltage
BVCEO 100
-
-
V IC=30mA
Emitter-Base Breakdown Voltage
BVEBO
5
-
-
V IE=1mA
Collector Cutoff Current
ICBO
ICEO
-
-
- 10 µA VCB=100V
- 10 µA VCE=50V
Emitter Cutoff Current
IEBO
-
-
2 mA VEB=5V
Collector-Emitter Saturation Voltage(1)
Base-Emitter Saturation Voltage(1)
Base-Emitter On Voltage(1)
VCE(sat)1
VCE(sat)2
VBE(sat)
VBE(on)
-
-
-
-
- 2 V IC=4A, IB=16mA
- 4 V IC=8A, IB=80mA
- 4.5 V IC=8A, IB=80mA
- 2.8 V IC=4A, VCE=4V
DC Current Gain(1)
hFE1
1K
- 12K
- IC=4A, VCE=4V
hFE2 100
-
-
- IC=8A, VCE=4V
Output Capacitance
Cob - 130 - pF VCB=10V, f=1MHz
(1)Pulse Test: Pulse Width 380µs, Duty Cycle 2%
1 page | ||
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