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PDF IRFP4232PBF Data sheet ( Hoja de datos )
| Número de pieza | IRFP4232PBF | |
| Descripción | PDP SWITCH | |
| Fabricantes | International Rectifier | |
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PD - 96965A
PDP MOSFET
IRFP4232PbF
Features
l Advanced process technology
l Key parameters optimized for PDP Sustain &
Energy Recovery applications
l Low EPULSE rating to reduce the power
dissipation in Sustain & ER applications
l Low QG for fast response
l High repetitive peak current capability for
reliable operation
l Short fall & rise times for fast switching
l175°C operating junction temperature for
improved ruggedness
l Repetitive avalanche capability for robustness
and reliability
Key Parameters
VDS min
250
VDS (Avalanche) typ.
300
RDS(ON) typ. @ 10V
30
EPULSE typ.
IRP max @ TC= 100°C
TJ max
310
117
175
D
G
V
V
m:
µJ
A
°C
S TO-247AC
Description
This HEXFET® Power MOSFET is specifically designed for Sustain; Energy Recovery & Pass switch
applications in Plasma Display Panels. This MOSFET utilizes the latest processing techniques to achieve
low on-resistance per silicon area and low EPULSE rating. Additional features of this MOSFET are 175°C
operating junction temperature and high repetitive peak current capability. These features combine to
make this MOSFET a highly efficient, robust and reliable device for PDP driving applications.
Absolute Maximum Ratings
Parameter
VGS
VGS (TRANSIENT)
ID @ TC = 25°C
ID @ TC = 100°C
IDM
IRP @ TC = 100°C
PD @TC = 25°C
PD @TC = 100°C
Gate-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current c
Repetitive Peak Current g
Power Dissipation
Power Dissipation
Linear Derating Factor
TJ
TSTG
Operating Junction and
Storage Temperature Range
Soldering Temperature for 10 seconds
Mounting Torque, 6-32 or M3 Screw
Thermal Resistance
Parameter
RθJC
Junction-to-Case f
Notes through
are on page 8
www.irf.com
Max.
±20
±30
60
42
240
117
430
210
2.9
-40 to + 175
300
10lbxin (1.1Nxm)
Typ.
–––
Max.
0.35
Units
V
A
W
W/°C
°C
N
Units
°C/W
1
04/21/05
1 page  
600
ID = 42A
500
400
300
TJ = 125°C
200
TJ = 25°C
100
0
4.0
6.0 8.0
VGS, Gate-to-Source Voltage (V)
10.0
Fig 13. On-Resistance Vs. Gate Voltage
5.5
5.0
4.5
4.0 ID = 250µA
3.5
3.0
2.5
2.0
1.5
-75 -50 -25 0 25 50 75 100 125 150 175
TJ , Temperature ( °C )
Fig 15. Threshold Voltage vs. Temperature
1
IRFP4232PbF
1000
800
ID
TOP 12A
18A
BOTTOM 42A
600
400
200
0
25
50 75 100 125 150 175
Starting TJ, Junction Temperature (°C)
Fig 14. Maximum Avalanche Energy Vs. Temperature
200
ton= 1µs
Duty cycle = 0.25
160
Half Sine Wave
Square Pulse
120
80
40
0
25
50 75 100 125 150
Case Temperature (°C)
175
Fig 16. Typical Repetitive peak Current vs.
Case temperature
D = 0.50
0.1 0.20
0.10
0.05
0.01 0.02
0.01
0.001
SINGLE PULSE
( THERMAL RESPONSE )
0.0001
1E-006
1E-005
τJ τJ
τ1 τ1
R1R1
R2R2
τ2 τ2
R3R3
τ3 τ3
R4R4
τCτ
Ri (°C/W)
0.0091
0.0487
τi (sec)
0.000003
0.000071
τ4τ4 0.1264 0.001743
CiC= iτi/Ri/iRi
0.1660 0.024564
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.0001
0.001
0.01
0.1
www.irf.com
t1 , Rectangular Pulse Duration (sec)
Fig 17. Maximum Effective Transient Thermal Impedance, Junction-to-Case
5
5 Page | ||
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| PDF Descargar | [ Datasheet IRFP4232PBF.PDF ] | |
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