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PDF DY227 Data sheet ( Hoja de datos )
| Número de pieza | DY227 | |
| Descripción | TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR | |
| Fabricantes | Dc Components | |
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DC COMPONENTS CO., LTD.
R DISCRETE SEMICONDUCTORS
DY227
TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR
Description
Designed for low frequency power amplifier
applications.
TO-92
Pinning
1 = Emitter
2 = Base
3 = Collector
Absolute Maximum Ratings(TA=25oC)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
PD
TJ
TSTG
Rating
30
25
5
300
400
+150
-55 to +150
Unit
V
V
V
mA
mW
oC
oC
.190(4.83)
.170(4.33)
.190(4.83)
.170(4.33)
.500
(12.70)
Min
2o Typ
2o Typ
.050
(1.27)Typ
.022(0.56)
.014(0.36)
.100
(2.54)
Typ
.022(0.56)
.014(0.36)
321
.148(3.76)
.132(3.36)
.050
5oTyp. 5oTyp. (1.27)Typ
Dimensions in inches and (millimeters)
Electrical Characteristics
(Ratings at 25oC ambient temperature unless otherwise specified)
Characteristic
Symbol Min
Collector-Base Breakdown Volatge
BVCBO 30
Collector-Emitter Breakdown Voltage BVCEO 25
Emitter-Base Breakdown Volatge
BVEBO
5
Collector Cutoff Current
ICBO
-
Emitter Cutoff Current
Collector-Emitter Saturation Voltage(1)
DC Current Gain(1)
IEBO
VCE(sat)
hFE
-
-
70
(1)Pulse Test: Pulse Width 380µs, Duty Cycle 2%
Typ Max Unit
Test Conditions
- - V IC=100µA, IE=0
- - V IC=10mA, IB=0
- - V IE=10µA, IC=0
- 100 nA VCB=25V, IE=0
- 100 nA VEB=3V, IC=0
- 400 mV IC=300mA, IB=30mA
- 400 - IC=50mA, VCE=1V
Classification of hFE
Rank
O
Y
Range 70~140 120~240
G
200~400
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| PDF Descargar | [ Datasheet DY227.PDF ] | |
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