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PDF MMBT2369-G Data sheet ( Hoja de datos )
| Número de pieza | MMBT2369-G | |
| Descripción | GENERAL PURPOSE TRANSISTORS | |
| Fabricantes | Comchip Technology | |
| Logotipo |  |
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General Purpose Transistors
MMBT2369-G (NPN)
RoHS Device
COMCHIP
SMD Diodes Specialist
Features
-Power dissipation
PC=0.3W
Marking: M1J
Collector
3
0.056(1.40)
0.047(1.20)
0.044(1.10)
0.035(0.90)
SOT-23
0.119(3.00)
0.110(2.80)
3
12
0.083(2.10)
0.066(1.70)
0.006(0.15)
0.002(0.05)
0.103(2.60)
0.086(2.20)
1
Base
0.020(0.50)
0.013(0.35)
0.006(0.15) max
0.007(0.20) min
2
Emitter
Dimensions in inches and (millimeter)
Maximum Ratings (at Ta=25 OC unless otherwise noted)
Parameter
Symbol
Value
Unit
Collector-Base voltage
VCBO
40
Collector-Emitter voltage
VCEO
15
Emitter-Base voltage
VEBO
4.5
Collector current-continuous
IC 0.2
Power dissipation
PC 300
Thermal resistance, junction to ambient air
RθJA
417
Junction and storage temperature range
TJ, TSTG
-55 to +150
Electrical Characteristics (at Ta=25 OC unless otherwise noted)
Parameter
Symbol Conditions
Min Typ.
Max
V
V
V
A
mW
OC/W
OC
Unit
Collector-Base breakdown voltage
Collector-Emitter breakdown voltage
Emitter-Base breakdown voltage
Collector cut-off current
DC current gain
Collector-Emitter saturation voltage
Collector output capacitance
Turn on time
Storage time
Turn off time
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
hFE(1)
hFE(2)
V C E ( S AT)
Cob
tON
tS
tOFF
IC=10μA, IE=0
IC=10mA, IB=0
IE=10μA, IC=0
VCB=20V, IE=0
VCE=1V, IC=10mA
VCE=2V, IC=100mA
IC=10mA, IB=1mA
VCB=5V, IE=0, f=1MHz
VCC=3V, IC=10mA,
IB=3mA
VCC=3V, IC=10mA
IB1=3mA, IB2=1.5mA
40
15
4.5
40
20
QW-BTR24
V
V
V
0.4 μA
120
0.25
4
12
13
18
V
pF
nS
nS
nS
REV:A
Page 1
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet MMBT2369-G.PDF ] | |
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