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PDF LP750 Data sheet ( Hoja de datos )
| Número de pieza | LP750 | |
| Descripción | 0.5 W POWER PHEMT | |
| Fabricantes | Filtronic Compound Semiconductors | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de LP750 (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
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• FEATURES
♦ 28 dBm Output Power at 1-dB Compression at 18 GHz
♦ 10 dB Power Gain at 18 GHz
♦ 24 dBm Output Power at 1-dB Compression at 3.3V
♦ 55% Power-Added Efficiency
LP750
0.5 W POWER PHEMT
DRAIN
BOND
PAD
SOURCE
BOND
PAD (2x)
GATE
BOND
PAD
• DESCRIPTION AND APPLICATIONS
DIE SIZE: 12.6X16.9 mils (320x430 µm)
DIE THICKNESS: 3 mils (75 µm)
BONDING PADS: 3.3X2.4 mils (85x60 µm)
The LP750 is an Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs)
Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam direct-
write 0.25 µm by 750 µm Schottky barrier gate. The recessed “mushroom” gate structure minimizes
parasitic gate-source and gate resistances. The epitaxial structure and processing have been
optimized for reliable high-power applications. The LP750 also features Si3N4 passivation and is
available in a variety of packages, including SOT89 and P100 packages.
Typical applications include commercial and other types of high-performance power amplifiers,
including use within SATCOM uplink transmitters, PCS/Cellular low-voltage high-efficiency output
amplifiers, and medium-haul digital radio transmitters.
• ELECTRICAL SPECIFICATIONS @ TAmbient = 25°C
Parameter
Symbol
Test Conditions
Saturated Drain-Source Current
Power at 1-dB Compression
Power Gain at 1-dB Compression
Power-Added Efficiency
IDSS
P-1dB
G-1dB
PAE
Maximum Drain-Source Current
Transconductance
Gate-Source Leakage Current
Pinch-Off Voltage
Gate-Source Breakdown
Voltage Magnitude
Gate-Drain Breakdown
Voltage Magnitude
Thermal Resistivity
frequency=18 GHz
IMAX
GM
IGSO
VP
|VBDGS|
|VBDGD|
ΘJC
VDS = 2 V; VGS = 0 V
VDS = 8 V; IDS = 50% IDSS
VDS = 8 V; IDS = 50% IDSS
VDS = 8 V; IDS = 50% IDSS;
PIN = 10 dBm
VDS = 2 V; VGS = 1 V
VDS = 2 V; VGS = 0 V
VGS = -3 V
VDS = 2 V; IDS = 4 mA
IGS = 4 mA
IGD = 4 mA
Min Typ Max Units
180 225 265 mA
26.5 28
dBm
8 10
dB
55 %
400 mA
180 230
mS
5 40 µA
-0.25 -1.2 -2.0 V
-12 -15
V
-12 -16
V
65 °C/W
Phone: (408) 988-1845
Fax: (408) 970-9950
http:// www.filss.com
Revised: 2/26/01
Email: [email protected]
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet LP750.PDF ] | |
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