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What is SE2425U?

This electronic component, produced by the manufacturer "SiGe Semiconductor", performs the same function as "Bluetooth Power Amplifier IC Preliminary Information".


SE2425U Datasheet PDF - SiGe Semiconductor

Part Number SE2425U
Description Bluetooth Power Amplifier IC Preliminary Information
Manufacturers SiGe Semiconductor　
Logo SiGe Semiconductor Logo　


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SE2425U
RangeChargerTM 2.4 GHz Bluetooth Power Amplifier IC
Preliminary Information
Applications
ƒ Bluetoothtm wireless technology (Class 1)
ƒ USB dongles, PCMCIA, flash cards, Access Points
ƒ Enhanced data rate
Features
ƒ Integrated input and inter-stage match
ƒ +25 dBm GFSK Output Power
ƒ +19.5 dBm 8DPSK Output Power
ƒ Low current: 110 mA typical @ POUT = +20 dBm
ƒ Ultra low quiescent current: 28 mA
ƒ Digital Enable for direct interface to standard
CMOS processors
ƒ Mode-control for easy switching between standard
and EDR modes
ƒ Gain: 29 dB
ƒ 3.3 V single supply operation
Ordering Information
Type
SE2425U
SE2425U-R
SE2425U-EK1
Package
3 x 3 x 0.5 mm QFN
3 x 3 x 0.5 mm QFN
N/A
Remark
Sample
Tape & Reel
Evaluation Kit
Product Description
A monolithic, high-efficiency, silicon-germanium power
amplifier IC, the SE2425U is designed for 2.4 GHz
wireless applications, including BluetoothTM Class 1
basic rate and enhanced data rate applications. It
delivers +25 dBm output power in standard rate GFSK
mode and +19.5 dBm output power in enhanced rate
8DPSK.
The SE2425U provides a digital mode control input for
boosting the linear performance for enhanced data rate
applications.
The SE2425U operates at 3.3 V DC with a peak
efficiency of 43 % in basic rate and 21 % in enhanced
rate mode. The internal bias management allows the
part to only draw 28 mA in Class 2 output power levels.
Output match integrates the high Q inductors to reduce
component count and bill of materials. It uses two
external capacitors to allow for varying loads, such as
switches and filters, in different applications.
The silicon/silicon-germanium structure of the
SE2425U, and its exposed die-pad package, soldered
to the system PCB, provide high thermal conductivity
and a subsequently low junction temperature. This
device is capable of operating at a duty cycle of 100
percent.
Functional Block Diagram
EN MODE VCC0 VCC1 VCC2 VCC3
( 4 ) ( 5 ) ( 2 ) ( 16 ) ( 15 ) ( 14 )
RF IN
(1)
Input
Match
Digital Bias & Enable Logic
Inter-
Stage
Match
Inter-
Stage
Match
RF OUT
(7)
SiGe SE2425U
GND
( Paddle )
Figure 1: SE2425U Block Diagram
165-DST-01 ƒ Rev 1.3 ƒ Apr-05-2006
Confidential
QA040506
1 of 10

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SE2425U equivalent
SE2425U
RangeChargerTM 2.4 GHz Bluetooth Power Amplifier IC
Preliminary Information
Typical Performance Characteristics
Low Mode
Test Conditions: VEN = VCC0 = VCC1 = VCC2 = VCC3 = 3.3 V, MODE = Low, TC = 25 °C, f = 2.45 GHz, as measured on
SiGe’s SE2425U-EV1 evaluation board otherwise noted
Output Power vs. Input Power
(25 C, 3.3 V, 2.45 GHz, Low Mode)
25
Icc vs. Output Power
(25C, 3.3 V, 2.45 GHz, Low Mode)
0.25
20 0.2
15 0.15
10 0.1
5 0.05
0
-30 -25 -20 -15 -10
Input Pow er (dBm )
-5
0
0
0 5 10 15 20 25
Output Pow er (dBm )
Figure 3: Typical Performance Data in Low Mode (a) Output Power vs. Input Power, (b) Current vs. Output
Power
-14
-16
-18
-20
-22
-24
-26
-28
-30
-32
-34
16
2MBit ACPR 2MHz Offset over Output Power
(25 C, 2.45 GHz, Low Mode)
2.7V, -2MHz
3.3V, -2MHz
3.6V, -2MHz
2.7V, +2MHz
3.3V, +2MHz
3.6V, +2MHz
17 18 19 20
Output Pow er (dBm )
21
-36
-38
-40
-42
-44
-46
-48
-50
-52
-54
-56
14
2MBit ACPR 3MHz Offset vs. Output Power over Voltage
(25 C, 2.45 GHz, Low Mode)
2.7V, -3MHz
2.7V, +3MHz
3.3V, -3MHz
3.6V, -3MHz
3.3V, +3MHz
3.6V, +3MHz
15 16 17 18
Output Pow er (dBm )
19
Figure 4: Typical 2 Mbps Enhanced Data Rate (EDR) Performance Data in Low Mode (a) ACPR @ 2 MHz
Offset vs. Output Power over Voltage (b) ACPR @ 3 MHz Offset vs. Output Power over voltage
-14
-16
-18
-20
-22
-24
-26
-28
-30
-32
-34
16
3MBit ACPR 2MHz Offset vs. Output Power over Voltage
(25 C, 2.45 GHz, Low Mode)
2.7V, -2MHz
3.3V, -2MHz
3.6V, -2MHz
2.7V, +2MHz
3.3V, +2MHz
3.6V, +2MHz
17 18 19
Output Pow er (dBm )
20
21
-36
-38
-40
-42
-44
-46
-48
-50
-52
-54
-56
14
3MBit ACPR 3MHz Offset vs. Output Power over Voltage
(25 C, 2.45 GHz, Low Mode)
2.7V, -3MHz
3.3V, -3MHz
3.6V, -3MHz
2.7V, +3MHz
3.3V, +3MHz
3.6V, +3MHz
15 16 17 18
Output Pow er (dBm )
19
Figure 5: Typical 3 Mbps Enhanced Data Rate (EDR) Performance Data in Low Mode (a) ACPR @ 2 MHz
Offset vs. Output Power over Voltage (b) ACPR @ 3 MHz Offset vs. Output Power over voltage
165-DST-01 ƒ Rev 1.3 ƒ Apr-05-2006
Confidential
QA040506
5 of 10


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SE2425UThe function is Bluetooth Power Amplifier IC Preliminary Information. SiGe SemiconductorSiGe Semiconductor

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